Vertical Cavity Surface Emitting Laser Electrode Integration
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Solution Overview
Problem
The challenge is to reduce the package size of vertical cavity surface emitting lasers (VCSELs) while minimizing costs and avoiding additional metal wire bonding, which existing technologies have not effectively addressed.
Innovation Solution
A semiconductor laser device design featuring a base with an epitaxial structure comprising multiple semiconductor layers and electrodes, where the electrodes pass through the semiconductor structure to connect with an intermediate layer, allowing for reduced package size and efficient light emission without the need for additional metal wire bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional metal wire bonding is used for electrode connection, then electrical connection reliability is improved, but package size increases and manufacturing cost increases
Solution Approach 1:
The patent merges the electrode connection function directly into the semiconductor structure by having electrode pads extend through the semiconductor layer and make direct contact with the substrate, eliminating the need for separate wire bonding components and processes. This integration reduces package size while maintaining electrical connection reliability.
Solution Approach 2:
The patent extracts the metal wire bonding step from the manufacturing process by designing a structure where electrodes directly contact the substrate through the semiconductor layer, removing the intermediate wire bonding component and reducing overall package complexity and size.
2Reliability
If traditional metal wire bonding is used for electrode connection, then electrical connection is achieved, but manufacturing cost increases
Solution Approach 1:
The patent removes the wire bonding process step from the manufacturing sequence by designing electrodes that directly contact the substrate through the semiconductor layer, reducing manufacturing complexity and cost while maintaining reliable electrical connection.
Solution Approach 2:
The semiconductor structure itself provides the electrical connection function through its integrated electrode design, eliminating the need for external wire bonding services or processes, thereby reducing manufacturing cost and simplifying production.
3Reliability
If electrode pads are fully covered by semiconductor layer, then device protection is improved, but electrical connection to substrate becomes difficult
Solution Approach 1:
The patent segments the electrode pad structure into two functional zones: a covered region for device protection and an exposed region for electrical connection, allowing both protection and connectivity requirements to be satisfied simultaneously through spatial differentiation.
Solution Approach 2:
The patent resolves the contradiction by transitioning from a two-dimensional coverage problem to a three-dimensional structure where electrode pads extend vertically through the semiconductor layer, providing both protection (covered portions) and connection (exposed portions) in different spatial dimensions.
Data Source
AI summary
A semiconductor laser includes a base, an epitaxial structure on the base, and a first electrode and a second electrode on the epitaxial structure. The epitaxial structure includes a first semiconductor structure on the base, a second semiconductor structure on the first semiconductor structure, an intermediate layer on the second semiconductor structure, a third semiconductor structure on the intermediate layer, a current-confining layer in the third semiconductor structure, a fourth semiconductor structure on the third semiconductor structure, and an active structure between the third semiconductor structure and the fourth semiconductor structure. The first electrode and the second electrode are on the fourth semiconductor structure, wherein a part of the first electrode passes through the fourth semiconductor structure, the active structure, the current-confining layer and the third semiconductor structure and is connected to the intermediate layer.