VCSEL with GaAsSb Quantum Rings for 1260-1675 nm Emission
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Solution Overview
Problem
Existing VCSEL devices face challenges such as sensitivity to temperature changes, difficulty in achieving long wavelength emission, and reduced material quality due to the limitations of gallium arsenide and indium phosphide based materials, which hinder their widespread industrial application in fiber optic networks.
Innovation Solution
A VCSEL design incorporating gallium arsenide antimonide nanostructures with quantum rings in the active region, surrounded by aluminium gallium arsenide layers with a composition gradient, allowing for efficient laser emission within the 1260 to 1675 nm range without the need for active cooling, and reducing strain-related defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If indium phosphide based materials are used in VCSEL, then long wavelength emission (1260 to 1675 nm) can be achieved, but the device becomes extremely sensitive to temperature changes and lacks suitable DBR materials with high thermal conductivity
Solution Approach 1:
The patent employs a composite material system combining indium gallium arsenide phosphide with indium phosphide layers. This composite structure enables long wavelength emission (1260 to 1675 nm) while the indium phosphide provides the necessary bandgap properties and the indium gallium arsenide phosphide contributes to improved thermal conductivity and reduced temperature sensitivity, thus resolving the contradiction between wavelength range and temperature stability.
2Quantity of substance
If gallium arsenide based materials are used with lattice matched DBRs, then high thermal conductivity and reflectivity are achieved, but long wavelength emission (longer than one micron) cannot be achieved
Solution Approach 1:
The patent changes the material composition parameters by incorporating indium and phosphide into the gallium arsenide base structure. Specifically, it uses indium gallium arsenide phosphide with controlled indium and phosphorus content to achieve long wavelength emission (1260 to 1675 nm) while maintaining acceptable material quality and crystal structure, thus resolving the contradiction between wavelength extension and material quality.
3Quantity of substance
If strained quantum well layers or dilute nitrides are incorporated in gallium arsenide devices, then long wavelength emission is attempted, but material quality is reduced and device performance is negatively impacted
Solution Approach 1:
The patent adopts a material system (indium phosphide and indium gallium arsenide phosphide) that naturally supports long wavelength emission without requiring strained quantum well layers or dilute nitrides. This copying of the successful material composition from other long wavelength devices avoids the degradation of material quality and device performance, achieving both long wavelength emission (1260 to 1675 nm) and maintained reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The VCSEL achieves enhanced laser emission intensity and operational stability across a wide temperature range, with improved thermal conductivity and reduced defects, making it suitable for industrial use in fiber optic networks.
Implementation Method 1
Each mirror region generally comprises a distributed Bragg reflector ('DBR') formed of a plurality of thin layers of suitable materials
Implementation Method 2
Each nanostructure may comprise a quantum ring. Each quantum ring may be located within a quantum well
Implementation Method 3
laser emission is from at least one gallium arsenide antimonide nanostructure in the active region
Data Source
AI summary
A vertical-cavity surface-emitting laser (“VCSEL”) has at least a substrate, electrical contacts, a first mirror region, a second mirror region and an active region between the mirror regions; where the mirror regions comprise distributed Bragg reflectors formed of a plurality of layers; laser emission is from at least one gallium arsenide antimonide nanostructure in the active region; and each said nanostructure contains more antimony atoms than arsenic atoms.