VCSEL Ion-Doped and Oxidized Aperture Alignment
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Solution Overview
Problem
Conventional methods for manufacturing vertical cavity surface emitting lasers (VCSELs) face challenges with overlay misalignment during semiconductor processes, leading to suboptimal electric current confinement and spectrum properties due to misalignment between ion-doped and oxidized confinement apertures.
Innovation Solution
A manufacturing method where a ring-shaped ion-doped region is self-aligned with a ring-shaped oxidized region by using a specific etching mask design and oxidation process, ensuring precise alignment and improved current confinement and spectrum properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ion doping and selective oxidation methods are used to form confinement regions, then electric current confinement and spectrum properties are improved, but overlay misalignment occurs between ion-doped and oxidized confinement apertures
Solution Approach 1:
The patent applies self-aligned fabrication where the oxidized confinement aperture is automatically positioned relative to the ion-doped confinement aperture through a shared reference structure. The etching mask pattern serves as a common reference for both the ion doping step and the subsequent oxidation step, eliminating the need for separate alignment operations. This self-service approach ensures that the oxidized aperture and ion-doped aperture are perfectly aligned without requiring additional alignment precision from the manufacturing equipment.
2Reliability
If two sets of semiconductor processes are performed for forming ion-doped and oxidized confinement regions, then confinement performance is enhanced, but process complexity and misalignment risk increase
Solution Approach 1:
The patent merges the alignment references for ion doping and oxidation processes into a single etching mask pattern. Instead of using separate masks or alignment markers for each process step, the invention combines both references into one unified mask structure that defines the aperture geometry. This merging reduces the number of separate alignment operations required and simplifies the overall manufacturing process while maintaining enhanced confinement performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves enhanced electric current confinement and spectrum properties by ensuring precise alignment of ion-doped and oxidized apertures, thereby improving the optoelectronic characteristics of VCSELs.
Implementation Method 1
doping ions into the epitaxial layer stack and forming a ring-shaped ion-doped region over the aluminum-rich layer
Implementation Method 2
oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region
Data Source
AI summary
The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method.