VCSEL Light Reflection Structure Heat Dissipation
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Solution Overview
Problem
Optical semiconductor devices, particularly vertical-cavity surface-emitting lasers (VCSELs), face challenges in efficient heat dissipation and minimizing structural distortion, which affect their performance and reliability.
Innovation Solution
The design incorporates a substrate with a first light reflection structure and a buried layer where the surface of the first light reflection structure and the buried layer are in the same plane, along with a second light reflection structure and a current constriction structure, utilizing refractive index-changing layers and metal layers for enhanced heat dissipation and optical reflectance, and embedding heat-dissipating metals in the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat dissipation structures are added to VCSEL devices, then heat dissipation efficiency is improved, but device structure becomes more complex
Solution Approach 1:
The patent combines the heat dissipation function with existing structural elements by making the buried layer serve dual purposes: as a current blocking layer and as a heat dissipation pathway. The first light reflection structure is integrated into the substrate rather than being a separate component, reducing overall device complexity while maintaining effective heat dissipation.
Solution Approach 2:
The buried layer is designed to perform multiple functions simultaneously: electrical current blocking and thermal heat dissipation. This multi-functionality approach allows the device to address both electrical confinement and thermal management without adding separate dedicated structures for each function.
2Stability of the object's composition
If structural layers are added to reduce distortion, then device stability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating a current constriction structure with specific refractive index characteristics in a localized region. The first light reflection structure has varying refractive indices in different layers, allowing precise control of optical and mechanical properties where needed without affecting the entire device structure, thereby reducing overall manufacturing precision requirements.
Solution Approach 2:
The patent utilizes parameter changes by adjusting the refractive indices of different layers in the light reflection structures and current constriction layers. By optimizing these optical parameters, the device achieves better stress distribution and structural stability without requiring extreme manufacturing precision in other aspects.
3Reliability
If current constriction structures are implemented, then optical performance is improved, but device complexity increases
Solution Approach 1:
The current constriction structure is merged with the light reflection structures, where the same layered structures serve both optical confinement and current constriction functions. This integration reduces device complexity by eliminating the need for separate current blocking structures while maintaining effective current confinement for improved optical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation, reduces structural stress, and maintains device stability across temperature changes, enhancing the reliability and performance of the semiconductor light-emitting devices.
Implementation Method 1
a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure
Implementation Method 2
whose refractive index changes periodically in its in-plane direction
Data Source
AI summary
A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.