VCSEL Electrode Layout Using Slanted Sidewalls for Compact Packaging
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Solution Overview
Problem
The packaging structure of VCSEL devices faces challenges in miniaturization and high integration compatibility due to requirements for low cost, portability, and environmental reliability, especially in automotive applications, where the existing electrode configurations can lead to short circuits and misalignment issues.
Innovation Solution
The proposed solution involves configuring the electrode structure on the slanted side surface of the semiconductor stack, allowing for reduced packaging size and maintaining or improving the reliability of the packaging structure, even when the packaging size cannot be increased.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the electrode structure is configured on the slanted side surface of the semiconductor stack, then the packaging size can be reduced, but the electrical bonding reliability may be compromised
Solution Approach 1:
The electrode structure is extended from the top surface to the slanted side surface of the semiconductor stack, utilizing the side surface as an additional dimension for electrical contact. This dimensional transition allows the electrode to make contact with the semiconductor layer at an angled interface, reducing the required packaging footprint while maintaining bonding functionality.
Solution Approach 2:
The electrode structure is divided into multiple segments: a first electrode portion on the top surface and a second electrode portion on the slanted side surface. This segmentation allows each portion to serve specific functions - the first portion provides primary electrical contact while the second portion extends the contact area to the side surface, enabling compact packaging without sacrificing bonding reliability.
2Volume of moving object
If the packaging structure size is reduced for miniaturization, then portability and integration are improved, but the spacing between conductive pads may be insufficient causing short circuits
Solution Approach 1:
By transitioning the electrode contact from a purely planar top-surface configuration to an extended slanted side-surface configuration, the patent creates additional spatial separation between conductive pads in the vertical dimension. This dimensional utilization allows compact horizontal packaging while maintaining adequate electrical isolation between adjacent pads.
Solution Approach 2:
The slanted side surface introduces asymmetric geometry to the electrode configuration, breaking the symmetric top-surface contact pattern. This asymmetric arrangement optimizes the spacing and orientation of conductive pads, allowing reduced packaging size while preventing short circuits through improved geometric distribution of electrical contacts.
3Volume of moving object
If the electrode structure is extended to the slanted side surface, then the packaging structure can accommodate tighter spacing, but the device complexity increases
Solution Approach 1:
The first electrode portion on the top surface and the second electrode portion on the slanted side surface are merged into a single continuous electrode structure. This merging approach simplifies the overall design by eliminating the need for separate electrode components and complex interconnection structures, achieving compact packaging without proportionally increasing device complexity.
Solution Approach 2:
The extended electrode structure serves multiple functions simultaneously: it provides electrical contact on both the top and side surfaces, enables compact packaging, and maintains adequate pad spacing. This multi-functionality reduces the need for additional specialized components, thereby limiting the increase in device complexity despite the enhanced functionality.
Data Source
AI summary
A semiconductor laser (1000, 1001, 1002, 1003, 1004, 1005, 1006, 1007, 1000a, 1000a1, 1000a2, 1000a3, 1000b, 1000b1, 1000b2, 1000b3, 1000b4, 1000b, 2400), comprising a semiconductor stack (10), a first electrode structure, a second electrode structure, and an insulating layer (30, 30B, 301, 302, 601, 601, 602, 90, 93, 108). The semiconductor stack (10) has a first surface (11), a second surface (12), and a side surface (13). The semiconductor stack (10) comprises a first-type semiconductor layer (101, 101U1, 101U2), a second-type semiconductor layer (102, 102U1, 102U2, 102U3, 102U4), and an active layer (103, 103A, 103U1, 103U2, 103U3, 103U4) arranged between the first-type semiconductor layer (101, 101U1, 101U2) and the second-type semiconductor layer (102, 102U1, 102U2, 102U3, 102U4). The first electrode structure is arranged on the first surface (11) and the side surface (13). The second electrode structure is arranged on the second-type semiconductor layer (102, 102U1, 102U2, 102U3, 102U4) and is electrically connected to the second-type semiconductor layer (102, 102U1, 102U2, 102U3, 102U4). The insulating layer (30, 30B, 30U1, 30U2, 60, 60U1, 60U2, 90, 93, 108) is arranged between the semiconductor stack (10) and the first electrode structure and between the semiconductor stack (10) and the second electrode structure. The insulating layer (30, 30B, 30U1, 30U2, 60, 60U1, 60U2, 90, 93, 108) has an opening (31) on the first surface (11), and the first electrode structure is distributed in the opening (31) and in contact with the first-type semiconductor layer (101, 101U1, 101U2).