VCSEL Transceiver Module With Tunnel Junction Confinement
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Solution Overview
Problem
Existing VCSEL transceiver modules face limitations in high optical power applications due to wire bonding failures, which restrict the output power that can be achieved.
Innovation Solution
A VCSEL transceiver module with a VCSEL laser having HCG grading and a bottom DBR, designed to convert optical signals into electrical signals, is proposed. This module includes active regions with quantum wells and barriers surrounded by p-n junctions, and features tunnel junctions, buried tunnel junctions, and oxide confine apertures for electrical and optical confinement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If wire bonding is used to connect VCSEL devices, then electrical connections can be established, but wire bonding failures occur that restrict output power
Solution Approach 1:
The patent removes the wire bonding connection method from the system entirely. By integrating the VCSEL device directly onto the circuit board substrate, the design eliminates the intermediate wire bonding step that causes reliability failures, thereby enabling higher output power without the constraint of bonding weaknesses.
Solution Approach 2:
The VCSEL device is merged with the circuit board substrate into a single integrated structure. The device is mounted and electrically connected directly to the substrate, combining what were previously separate components (VCSEL, wire bonds, substrate) into a unified assembly that improves both reliability and power handling capability.
2Reliability
If conventional VCSEL structures are used, then manufacturing is simpler, but electrical and optical confinement is insufficient
Solution Approach 1:
The patent applies localized quality enhancements to specific regions of the VCSEL device. Oxide confinement layers are applied selectively in the active region to provide electrical and optical confinement where needed, while other regions maintain their conventional structure. This targeted approach improves confinement efficiency without unnecessarily complicating the entire device structure.
Solution Approach 2:
The device structure combines multiple materials with different properties to achieve superior electrical and optical confinement. The oxide confinement layers (such as AlGaAs or AlInAs) are integrated with the semiconductor active regions, creating a composite structure that leverages the unique properties of each material to enhance both electrical carrier confinement and optical mode confinement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed VCSEL transceiver module enhances the reliability and output power of optical communication systems by reducing the risk of wire bonding failures and providing efficient electrical and optical confinement mechanisms.
Implementation Method 1
A VCSEL transceiver module with a VCSEL laser having HCG grading and a bottom DBR, designed to convert optical signals into electrical signals
Implementation Method 2
active regions with quantum wells and barriers surrounded by p-n junctions, and features tunnel junctions, buried tunnel junctions, and oxide confine apertures for electrical and optical confinement
Implementation Method 3
VCSEL laser having HCG grading and a bottom DBR
Implementation Method 4
bottom DBR (distributed Bragg reflector)
Data Source
AI summary
A transceiver module includes a VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured. Additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process. The VCSEL laser has an HCG grading and a bottom DBR. The transceiver module is configured to convert optical signals into electrical signals.