2-D van der Waals Semiconductor Carrier Control via Polarization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current doping methods for 2-D van der Waals materials in semiconductor devices are unreliable and lead to defective materials, reducing the benefits of these materials, as they result in long-term performance issues and require conventional doping techniques that are less reliable and damaging.
Innovation Solution
Establishing free charge carrier concentration in 2-D van der Waals materials through the polarization of adjacent semiconductor materials, eliminating the need for conventional doping by using spontaneous and/or piezoelectric polarization to control carrier concentration, thereby attracting electrons or holes based on the polarization charge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional doping methods (transfer doping or interstitial/substitutional doping) are used to dope 2-D VDW material, then electron or hole transport is achieved, but the material becomes defective and reliability deteriorates
Solution Approach 1:
The patent extracts the harmful doping process entirely from the 2-D VDW material system. Instead of introducing dopants into the VDW material, the invention uses polarization-induced charge carriers in adjacent bulk semiconductor layers to provide the necessary carriers, completely removing the source of material defects while maintaining electrical functionality.
Solution Approach 2:
The patent introduces bulk semiconductor layers as an intermediary between the electrodes and the 2-D VDW material. These intermediary layers generate charge carriers through polarization and supply them to the VDW material without requiring direct doping, thus mediating the charge transport function while preserving the integrity of the VDW material.
2Quantity of substance
If interstitial or substitutional impurities are added to dope 2-D VDW material, then charge carrier concentration is increased, but material defects increase and benefits of 2-D material are reduced
Solution Approach 1:
The invention removes the need for adding impurities to the 2-D VDW material by extracting the charge carrier generation function to adjacent bulk semiconductor layers. The polarization of these bulk layers naturally provides the required charge carrier concentration without any contamination of the VDW material.
Solution Approach 2:
The patent changes the method of controlling charge carrier concentration from chemical doping (changing material composition) to physical polarization control (changing electric field parameters). By adjusting the polarization state of adjacent bulk semiconductors, the charge carrier concentration in the VDW material is controlled without altering its chemical purity.
3Ease of manufacture
If conventional doping techniques are used on 2-D VDW material, then doping is achieved, but the atoms desorb from surface and reliability decreases
Solution Approach 1:
The patent extracts the doping function from the 2-D VDW material surface where desorption occurs, and relocates it to bulk semiconductor layers where polarization can be maintained stably. This eliminates the desorption problem while preserving the ability to control charge carrier concentration.
Solution Approach 2:
Bulk semiconductor layers serve as intermediary structures that perform the doping function remotely. These intermediaries generate charge carriers through polarization and supply them to the VDW material without requiring direct contact or surface modification, thus avoiding desorption issues while maintaining manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in more reliable semiconductor devices with improved material quality, higher performance, and reduced heat generation, suitable for high-temperature and high-power applications, with enhanced dynamic range and reliability.
Implementation Method 1
The polarization of the polarized semiconductor material is established by spontaneous polarization and/or piezoelectric polarization of the semiconductor material
Implementation Method 2
The polarization of the polarized semiconductor material is established by spontaneous polarization and/or piezoelectric polarization of the semiconductor material
Data Source
AI summary
Embodiments of the present invention are directed to semiconductor electronic devices formed of 2-D van der Waals material whose free charge carrier concentration is determined by adjacent semiconductor's polarization. According to one particular embodiment, a semiconductor electronic device is composed of one or more layers of two dimensional (2-D) van der Waals (VDW) material; and one or more layers of polarized semiconductor material adjacent to the one or more layer of 2-D VDW material. The polarization of the adjacent semiconductor material establishes the free carrier charge concentration of the 2-D VDW material.