GaN VECSEL Grooves Relieve Strain Blueshift

The surface-emitting device is divided into multiple independent unit deposition parts (first unit deposition part, second unit deposition part, etc.) arranged in an array. Each unit can be independently controlled and optimized. This segmentation allows the device to handle heat distribution more effectively across multiple smaller units rather than concentrating heat in a single large structure, thereby maintaining positional accuracy while achieving high total output power.

The patent employs a hierarchical structure where unit deposition parts are nested within a larger array configuration. Each unit contains nested layers (DBR layers, active layers, buffer layers) that are systematically organized. This nested arrangement enables efficient heat management at multiple scales, allowing high power operation without compromising the positional stability of individual optical components.

By dividing the surface-emitting device into multiple unit deposition parts, the heat generation is distributed across several independent units. This segmentation prevents localized overheating that would otherwise cause optical axis deviation and attenuation of emitted laser light intensity, while still achieving high total output power through the combined operation of all units.

Each unit deposition part is designed with specific local characteristics including DBR layers with particular reflection ratios and active layers with optimized compositions. This local optimization ensures that each unit operates efficiently at its designated position, maintaining consistent light emission quality across the entire array even at high excitation intensities.

Different unit deposition parts are designed with varying local compositions and structures to compensate for the piezoelectric field effects. By adjusting the local quality of each unit (such as InGaN composition ratios, layer thicknesses, and buffer layer configurations), the blueshift can be minimized while maintaining the desired blue-to-green laser emission, thus preserving wavelength accuracy without requiring SHG devices.

The patent employs parameter optimization in the MQW structure design, including adjusting the composition ratios of InGaN layers, the thickness of active and buffer layers, and the configuration of DBR layers. These parameter changes are specifically tailored to reduce the piezoelectric field strength and minimize carrier shielding effects, thereby maintaining accurate wavelength emission in the blue-to-green range.