Vehicle Semiconductor Device With Double Trenches For Heat Control
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Solution Overview
Problem
In semiconductor devices, heat generated by active elements is easily transferred due to high thermal conductivity, leading to temperature imbalances and increased risk of resistance breakdown, especially in vehicle-mounted applications where high current and high temperatures are prevalent.
Innovation Solution
A vehicle-mounted semiconductor device featuring a semiconductor substrate with active elements surrounded by double trenches to insulate and separate them, connected in parallel and connected to an external circuit, using materials with lower heat conductivity to control temperature distribution and reduce heat transfer between elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If active elements are arranged closely to reduce device area, then device area is reduced, but heat dissipation becomes difficult and temperature increases
Solution Approach 1:
The patent divides the semiconductor substrate into multiple isolated regions using trenches. Each active element is surrounded by its own trench structure, segmenting the heat flow paths and preventing heat accumulation in a centralized location. This segmentation allows closer spacing of active elements while maintaining effective heat dissipation through the substrate thickness direction.
Solution Approach 2:
The patent transitions heat dissipation from a two-dimensional planar approach to a three-dimensional approach by utilizing the substrate thickness direction. Double trenches are formed to extend heat dissipation paths vertically through the substrate, allowing heat to be conducted away in the thickness direction rather than only laterally, thus enabling closer spacing without temperature increase.
2Temperature
If double trenches are used to insulate active elements, then temperature control is improved, but device complexity increases
Solution Approach 1:
The double trench structure segments the semiconductor substrate into isolated active regions, with each trench serving as a thermal and electrical isolation barrier. This segmentation provides effective temperature control while maintaining a regular, repeating pattern that simplifies manufacturing compared to irregular isolation structures.
Solution Approach 2:
The patent optimizes the depth and spacing parameters of the double trenches to achieve effective thermal isolation. By carefully controlling the trench depth to extend through the active region and the spacing between trenches, the patent achieves temperature control with a standardized structure that balances performance and manufacturing simplicity.
3Loss of energy
If active elements are thermally connected through silicon substrate, then heat dissipation is improved, but temperature uniformity deteriorates
Solution Approach 1:
The trench structures segment the thermal pathways in the silicon substrate, creating isolated thermal zones around each active element. This segmentation allows each active element to dissipate heat independently through the substrate thickness direction, preventing lateral heat transfer that would cause temperature non-uniformity while maintaining effective heat dissipation.
Solution Approach 2:
The trench structures act as thermal intermediaries or barriers between adjacent active elements. By introducing these trench regions with different thermal properties, the patent controls heat flow paths, allowing heat to be conducted vertically through the substrate while blocking lateral heat transfer that would create temperature gradients across the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively restricts temperature increases, improves resistance to breakdown, and reduces the size of the semiconductor device by controlling heat generation and dissipation, while maintaining withstanding voltage across active elements.
Implementation Method 1
a plurality of double trenches surrounding the plurality of active elements to insulate and separate the active elements
Data Source
Figure 1(a)~1(b)
Figure 2
Figure 3(a)~3(b)
AI summary
Provided is a vehicle-mounted semiconductor device enabling a temperature increase of active elements to be restricted. A vehicle-mounted semiconductor device includes: a semiconductor substrate; a plurality of active elements formed on the semiconductor substrate; a plurality of trenches surrounding the plurality of active elements to insulate and separate the active elements; and a terminal connecting in parallel the plurality of active elements insulated and separated by different trenches among the plurality of trenches and connected to an outside.