Vertical 2D Transistor Assembly for Defect-Tolerant Electrostatic Doping

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Solution Overview

Problem

The incorporation of two-dimensional-materials into transistors is hindered by crystalline defects, which negatively affect their electrical characteristics, and there is a need for improved transistor configurations utilizing these materials.

Innovation Solution

The use of electrostatic-doping-materials adjacent to the source/drain regions of two-dimensional-materials in vertical transistors to impart desired carrier properties, combined with specific processing methods like ALD and CVD, to form integrated assemblies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If bulk amounts of two-dimensional-materials are grown, then large area coverage is achieved, but crystalline defects increase

Engineering Contradiction:

Improvearea coverageVSAvoidcrystalline quality

Core Design Contradiction:

Area of stationary objectVSManufacturing precision

Solution Approach 1:

The patent divides the two-dimensional-material formation into discrete unit cells, each containing a single defect-tolerant transistor. This segmentation allows the use of two-dimensional-materials without requiring perfect crystalline quality across large areas, as each unit cell can be independently formed and controlled.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent implements different material qualities in different regions: monocrystalline semiconductor material is used in the channel region where high quality is critical, while two-dimensional-materials with defects are acceptable in source/drain regions where they are compensated by electrostatic doping. This local differentiation resolves the contradiction between area coverage and crystalline quality.

Inventive Principle:

Principle #3Local quality

2Adaptability or versatility

If two-dimensional-materials are used in transistors, then new device configurations are enabled, but electrical characteristics deteriorate due to crystalline defects

Engineering Contradiction:

Improvedevice configuration flexibilityVSAvoidelectrical characteristics

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent introduces electrostatic doping as an intermediary mechanism between the defective two-dimensional-material and the functional transistor operation. The electrostatic doping compensates for the electrical deficiencies caused by crystalline defects, enabling reliable device operation despite the use of imperfect two-dimensional-materials.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the electrical parameters of the two-dimensional-material through electrostatic doping, transforming the carrier concentration and type in source/drain regions. This parameter modification allows the material to function properly in transistor configurations even with inherent crystalline defects.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If electrostatic-doping-material is added adjacent to source/drain regions, then carrier properties are improved, but device complexity increases

Engineering Contradiction:

Improvecarrier propertiesVSAvoidtransistor structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the electrostatic doping function with the existing source/drain region formation process. The electrostatic-doping-material is deposited and patterned in the same fabrication sequence as the source/drain regions, combining multiple functions into a unified structure rather than adding separate complex components.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in monocrystalline two-dimensional-materials with improved electrical properties, enabling the development of high-performance transistors and memory devices.

Implementation Method 1

electrostatic-doping-material adjacent to source/drain regions of the active material and utilized to impart desired carrier properties to the source/drain regions

Methodology Applied

Scientific EffectElectrostatic doping: Electrostatic Induction

Implementation Method 2

specific processing methods like ALD and CVD

Methodology Applied

Scientific EffectAtomic Layer Deposition:

Implementation Method 3

specific processing methods like ALD and CVD

Methodology Applied

Scientific EffectChemical Vapor Deposition: Chemical Vapour Deposition

Data Source

PatentUS20260113977A1Integrated Assemblies and Methods of Forming Integrated Assemblies

Publication Date: 2026.04.23 MICRON TECHNOLOGY INC

AI summary

Some embodiments include an integrated assembly having an upwardly-extending structure with a sidewall surface. Two-dimensional-material extends along the sidewall surface. First electrostatic-doping-material is adjacent a lower region of the two-dimensional-material, insulative material is adjacent a central region of the two-dimensional-material, and second electrostatic-doping-material is adjacent an upper region of the two-dimensional-material. A conductive-gate-structure is over the first electrostatic-doping-material and adjacent to the insulative material. Some embodiments include methods of forming integrated assemblies.