Vertical Cavity Mesa Oxidation Damage Control

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Solution Overview

Problem

Existing methods for manufacturing semiconductor light-emitting devices with vertical cavity structures face issues such as deformation and damage due to volume shrinkage during oxidation, leading to mechanical destruction and reduced device lifetime, and complications in maintaining the necessary mesa height and suppressing damage growth.

Innovation Solution

A method involving the formation of a vertical cavity structure with a layer to be oxidized, followed by creating a circular groove and oxidizing the layer from the side face to form a current confinement layer, and then using a mask layer to selectively etch the edge and side face of the mesa, thereby removing unnecessary oxidation regions without altering the mesa height significantly.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the layer to be oxidized is oxidized from the side face to form a current confinement layer, then the current confinement function is improved, but deformation and damage occur in other layers due to volume shrinkage

Engineering Contradiction:

Improvecurrent confinement functionVSAvoidmechanical integrity of layers

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The patent applies local quality by creating a groove with specific depth that penetrates only the layer to be oxidized, not the entire vertical cavity structure. This localized approach ensures that oxidation occurs only in the intended region, preventing volume shrinkage damage to other layers while maintaining current confinement function.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent segments the oxidation process by introducing a groove that divides the structure into an oxidized region (current confinement layer) and a non-oxidized region (other layers). This segmentation allows selective oxidation without affecting the mechanical integrity of the entire device.

Inventive Principle:

Principle #1Segmentation

2Reliability

If excessive oxidation is performed to ensure current confinement, then the current confinement layer is well-formed, but other layers are also oxidized causing deformation and mechanical destruction

Engineering Contradiction:

Improvecurrent confinement layer qualityVSAvoidoxidation damage to other layers

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by forming a groove of controlled depth before the oxidation process. This pre-established groove acts as a physical barrier that prevents oxidation from penetrating into other layers, allowing excessive oxidation conditions without causing damage to the DBR layers and substrate.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The groove serves as an intermediary structure that mediates between the oxidation process and the vulnerable layers. By introducing this intermediate feature, the patent allows the oxidation to proceed aggressively while the groove protects the DBR layers and substrate from oxidation damage.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If the mesa height is maintained for device performance, then the light emission characteristics are improved, but damage growth from the oxidation front cannot be suppressed

Engineering Contradiction:

Improvelight emission performanceVSAvoiddamage control at oxidation front

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent segments the vertical cavity structure by introducing a groove that creates a clear boundary between the oxidized current confinement layer and the non-oxidized functional layers. This segmentation allows the mesa to maintain its full height for optimal light emission while the groove prevents damage propagation from the oxidation front into the DBR layers.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses the growth of damage and deformation in layers other than the current confinement layer, maintaining a necessary mesa height and improving the reliability of the semiconductor light-emitting device by preventing excessive oxidation and mechanical destruction.

Implementation Method 1

The layer to be oxidized 115D is selectively oxidized from the side face of the mesa 118D, for example, by a high-temperature oxidation treatment in a water-vapor atmosphere

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS7871841B2Method for manufacturing semiconductor light-emitting device

Publication Date: 2011.01.18 SONY GROUP CORP

AI summary

A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.