Vertical Channel Gate Structure to Prevent Transistor Collapse
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Solution Overview
Problem
As the aspect ratio of vertical channel transistors increases, they tend to bend or collapse, which affects the integration and performance of semiconductor devices.
Innovation Solution
The semiconductor device includes a substrate with bit line structures, channels electrically connected to the bit line structures, a gate insulation pattern structure, a gate electrode structure with first and second gate electrodes, and capacitors connected to the channels. The gate electrode structure is designed to surround the channels, and the gate insulation and electrode structures are formed separately to allow for adjustable electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the aspect ratio of vertical channel transistors is increased, then integration is improved, but the channel bends or collapses
Solution Approach 1:
The gate electrode structure is divided into multiple segments (first gate electrode, second gate electrode, third gate electrode) that are positioned at different heights along the vertical channel. This segmentation allows each gate electrode to independently control and support specific sections of the channel, preventing bending and collapse while maintaining high aspect ratio for improved integration.
Solution Approach 2:
The gate electrode structure extends in the vertical direction (third direction) to wrap around the vertical channel, creating a three-dimensional Gate-All-Around structure. This dimensional extension provides mechanical support to the channel from multiple directions, preventing bending and collapse while enabling higher aspect ratios for better integration density.
2Adaptability or versatility
If gate insulation and electrode structures are formed separately, then electrical characteristics are adjustable, but device complexity increases
Solution Approach 1:
The gate structure is segmented into gate insulation pattern and gate electrode structure as separate components. This segmentation allows independent formation and optimization of each component, enabling adjustment of electrical characteristics (such as threshold voltage control through different insulation materials) while the modular nature actually simplifies the manufacturing process by allowing sequential formation.
Data Source
AI summary
A semiconductor device includes bit line structures spaced apart from each other in a first direction, and each of the bit line structures extends in a second direction; channels on the bit line structures, wherein the channels are electrically connected to the bit line structures and spaced apart from each other in the first direction; a gate insulation pattern structure on sidewalls of each of the channels; a gate electrode structure including: a first gate electrode on a first sidewall of the gate insulation pattern structure; and a second gate electrode on a second sidewall of the gate insulation pattern structure, wherein the second sidewall faces the first sidewall in the second direction, wherein the second gate electrode is on a third sidewall in the first direction of an end portion of the gate insulation pattern structure, and wherein the second gate electrode contacts the first gate electrode.