Vertical Channel Transistor Gate Stack for Reliable Integration
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Solution Overview
Problem
The challenge lies in forming high-reliability vertical channel transistors in semiconductor devices, which are essential for highly integrated miniaturized semiconductor devices but are difficult to manufacture effectively.
Innovation Solution
The semiconductor device design includes a conductive line with multiple gate electrodes separated by insulating layers, channel layers, and source/drain regions, arranged in a specific configuration within device isolation trenches to reduce resistance-capacitance delay and enhance reliability, featuring a layout that allows independent operation of vertical channel transistors without mutual interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vertical channel transistors are formed in highly integrated semiconductor devices, then device integration and miniaturization are improved, but manufacturing reliability deteriorates
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode and second gate electrode) separated by a gate isolation insulating layer. This segmentation allows independent formation and optimization of each gate segment, improving manufacturing reliability while maintaining high integration. The segmented structure enables better control over the vertical channel regions and reduces manufacturing variability.
Solution Approach 2:
Different regions of the transistor structure are given different properties: the gate isolation insulating layer provides electrical isolation between gate segments, the first and second channel layers are positioned on opposite side surfaces to create localized conduction paths, and source/drain regions are selectively doped in specific locations. This local differentiation optimizes each region's function while ensuring overall device reliability.
2Volume of moving object
If multiple gate electrodes are stacked vertically, then device miniaturization is improved, but device complexity increases
Solution Approach 1:
The second gate electrode is positioned on top of the first gate electrode, creating a nested vertical stack configuration. This nesting approach achieves three-dimensional integration and miniaturization by utilizing the vertical dimension, while the regular repeating pattern of the stack simplifies the overall fabrication process compared to more complex three-dimensional structures.
Solution Approach 2:
The transistor structure transitions from a planar two-dimensional layout to a three-dimensional vertical structure by stacking gate electrodes and forming channel layers on side surfaces. This dimensional change enables higher integration density while the standardized vertical stack geometry maintains manufacturing simplicity through repeated patterns.
3Adaptability or versatility
If gate electrodes are separated by insulating layers, then transistor independence is improved, but manufacturing precision requirements increase
Solution Approach 1:
The gate isolation insulating layer acts as an intermediary element between the first and second gate electrodes, providing electrical isolation and mechanical separation. This intermediary structure enables independent control of adjacent transistors while the layer's uniform thickness and material properties provide a forgiving manufacturing interface that reduces alignment precision requirements compared to direct gate-to-gate spacing.
Data Source
AI summary
A semiconductor device including a conductive line on a substrate, a first gate electrode on the conductive line, a second gate electrode separated by a gate isolation insulating layer on the first gate electrode, a first channel layer on a side surface of the first gate electrode, with a first gate insulating layer therebetween, a first source/drain region on another side surface of the first gate electrode, a second channel layer on another side surface of the second gate electrode on a side that is opposite to the first channel layer, with a second gate insulating layer therebetween, a second source/drain region on the second channel layer, and a third source/drain region on the first channel layer and on a side surface of the second gate electrode on a same side as the first channel layer may be provided.