Vertical Channel Gate Structure With Nitrogen Isolation
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Solution Overview
Problem
In semiconductor device manufacturing, etching processes can lead to the formation of undesired oxide layers and electrical insulation deterioration, causing potential electrical shorts between patterns.
Innovation Solution
A semiconductor device design that includes nitrogen-containing portions and oxide patterns, such as silicon oxynitride, to enhance electrical insulation between the gate structure and source/drain layer, reducing the risk of electrical shorts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If curing process or cleansing process is performed to cure damage to patterns and remove etching residue, then pattern quality is improved, but undesired oxide layers are formed and electrical insulation deteriorates
Solution Approach 1:
A nitrogen-containing layer is introduced as an intermediary substance between the pattern surfaces. This layer prevents direct oxidation during curing and cleansing processes while allowing the processes to effectively cure pattern damage and remove etching residue. The nitrogen-containing layer acts as a protective mediator that enables the beneficial effects of curing/cleansing while preventing the harmful oxide formation.
Solution Approach 2:
The nitrogen-containing layer is formed in advance before the curing or cleansing processes that would otherwise cause undesired oxidation. By establishing this protective layer beforehand, the patent prevents the harmful chemical reaction (oxidation) from occurring during subsequent processing steps, thereby maintaining electrical insulation while still allowing the patterns to be properly cured and cleaned.
2Reliability
If nitrogen-containing portion is formed at upper portion of uppermost channel, then electrical insulation between gate structure and source/drain layer is enhanced, but device structure becomes more complex
Solution Approach 1:
The nitrogen-containing layer is selectively formed only at specific locations where electrical insulation is critical - namely at the upper portion of the uppermost channel and in regions adjacent to the gate structure. This localized approach provides enhanced electrical insulation precisely where needed without unnecessarily complicating the entire device structure. The layer is absent or minimal in regions where it is not required for electrical isolation.
Solution Approach 2:
The nitrogen-containing layer is positioned in the vertical dimension (at the upper portion of the uppermost channel) rather than extending horizontally throughout the entire device. This vertical placement strategically blocks electrical conduction paths between the gate structure and source/drain layer without adding horizontal complexity to the device layout.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design effectively enhances electrical insulation, reducing the risk of electrical shorts and improving the reliability of semiconductor devices.
Implementation Method 1
A nitrogen-containing portion may be formed at an upper portion of an uppermost one of the channels, and may be doped with nitrogen
Implementation Method 2
an oxide pattern on an upper surface of an end portion of an uppermost one of the channels and including silicon oxynitride
Data Source
AI summary
A semiconductor device includes channels spaced apart from each other on a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate structure on the substrate and bordering lower and upper surfaces and a first sidewall of at least a portion of each of the channels, and a source/drain layer on a portion of the substrate adjacent to the gate structure and contacting second sidewalls of the channels. A nitrogen-containing portion is formed at an upper portion of an uppermost one of the channels, and may be doped with nitrogen.