Vertical Chip Capacitor Structure for High Capacitance Stability

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Solution Overview

Problem

Existing chip capacitors face challenges in efficiently utilizing lateral space on semiconductor substrates while ensuring larger capacitance and maintaining component stability.

Innovation Solution

A chip part design featuring a semiconductor substrate with wall portions formed by pillar units, each with a central portion and three protruding portions, allowing for a vertical capacitor structure that utilizes the substrate's thickness direction, increasing capacitance without limiting by plane size and enhancing stability through cantilevered support.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a horizontal capacitor structure is used on the semiconductor substrate, then the manufacturing process is simple, but the lateral space utilization is poor and capacitance is limited

Engineering Contradiction:
ImprovecapacitanceVSAvoidlateral space
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent transitions from a horizontal capacitor structure to a vertical capacitor structure, utilizing the thickness direction (vertical dimension) of the semiconductor substrate. The wall portions extend vertically from the first main surface toward the second main surface, allowing the capacitor to be formed in the vertical dimension rather than consuming lateral area. This dimensional change enables high capacitance while maintaining small lateral footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If the wall portions are made taller to increase capacitance, then the capacitance increases, but the stability and mechanical strength of the wall portions deteriorate

Engineering Contradiction:
ImprovecapacitanceVSAvoidstability of wall portions
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The wall portions are segmented into multiple pillar units, each comprising a central portion and three protruding portions. This segmentation creates a structured configuration where the protruding portions can be selectively connected to the substrate body at different heights, providing mechanical support at intervals along the vertical extent. This allows the wall portions to achieve greater height for increased capacitance while maintaining stability through periodic anchoring to the substrate.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If the pillar units are separated to increase flexibility, then the manufacturing is easier, but the structural stability and strength of the wall portions decrease

Engineering Contradiction:
Improvepillar formationVSAvoidstructural strength of wall portions
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The protruding portions of adjacent pillar units are connected to form continuous wall portions that extend vertically. This merging of previously separate pillar units creates structurally continuous walls that maintain high mechanical strength while retaining the manufacturing advantages of the modular pillar unit approach. The connection between protruding portions integrates the segmented structures into a cohesive load-bearing configuration.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12490442B2Chip parts
Publication Date: 2025.12.02 ROHM CO LTD
  • US12490442B2 patent drawing
  • US12490442B2 patent drawing
  • US12490442B2 patent drawing

AI summary

The present disclosure provides a chip part. The chip part includes: a capacitor portion, including a plurality of wall portions separated from each other by a plurality of trenches formed on the first main surface and having a lengthwise direction; a substrate body, formed around the capacitor portion using a portion of the semiconductor substrate; a lower electrode, disposed using at least a portion of the semiconductor substrate including the wall portions; a capacitive film, disposed along top and side surfaces of the plurality of wall portions; and an upper electrode, disposed on the capacitive film.