Vertical Conduction Buck Converter Package Thermal Management
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Solution Overview
Problem
Conventional semiconductor packages for high power buck converter applications face challenges in thermal dissipation and compact integration due to stacked configurations, which increase complexity, cost, and form factor, while planar transistors lack sufficient current carrying capacity.
Innovation Solution
A vertical conduction buck converter power phase package design that integrates control and synchronous transistors with a driver IC in a single package, using vertical conduction devices with accessible drain connections on both surfaces and a conductive clip for enhanced thermal management, allowing lateral spacing and improved heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If stacked configuration is used to combine control transistor and synchronous transistor, then current carrying capacity is improved, but thermal dissipation deteriorates and device complexity increases
Solution Approach 1:
The patent transitions from a vertical stacked configuration to a lateral planar configuration where transistors are arranged side-by-side on the same substrate plane. This dimensional change allows heat to dissipate laterally through the substrate to multiple heat sinks rather than being trapped in a vertical stack, thereby improving thermal dissipation while maintaining compact form factor through optimized lateral spacing and substrate design.
Solution Approach 2:
The patent segments the thermal management system by providing separate heat sink paths for each transistor. Each transistor has its own thermal coupling path to the substrate and heat sinks, allowing independent thermal management. This segmentation enables heat from each device to be dissipated separately, preventing heat accumulation and improving overall thermal dissipation performance.
2Power
If stacked configuration is used to combine control transistor and synchronous transistor, then current carrying capacity is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple connection functions into a single planar substrate structure. All transistor connections, heat sink attachments, and electrical interconnections are integrated into one lateral layout rather than requiring multiple stacked layers. This consolidation reduces the number of connection steps, simplifies manufacturing, and lowers overall device complexity while maintaining the high current carrying capacity through optimized conductor traces and contact configurations.
3Temperature
If planar transistors are used, then thermal dissipation is improved, but current carrying capacity deteriorates
Solution Approach 1:
The patent changes key geometric parameters of the planar transistor design, including increasing the width and area of conductor traces, optimizing contact pad sizes, and adjusting lateral spacing between devices. These parameter changes enable the planar configuration to achieve current carrying capacity comparable to stacked designs while maintaining superior thermal dissipation through the lateral heat flow paths to multiple heat sinks.
4Productivity
If stacked configuration is used, then compact integration is achieved, but form factor increases
Solution Approach 1:
The patent utilizes efficient use of the substrate plane by arranging components in an optimized lateral layout that minimizes package area. The planar configuration allows for compact arrangement of transistors, capacitors, and interconnects within a small footprint, achieving superior area efficiency compared to traditional stacked approaches while maintaining all necessary functional connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides efficient thermal dissipation and compact integration with enhanced current carrying capacity, reducing complexity and cost, while allowing for optional integration of a driver IC, thus addressing the limitations of stacked and planar configurations.
Implementation Method 1
a conductive clip for enhanced thermal management, allowing lateral spacing and improved heat dissipation
Data Source
AI summary
One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip.