Vertical Conductive Connections Outside Active Area
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Solution Overview
Problem
Conventional sensor modules with vertical conductive connections, such as through silicon vias (TSVs), occupy significant portions of the active area, reducing the fill factor and increasing the size of the module due to the space required for electrical connections, which limits the resolution and sensitive area of sensor devices like light sensors.
Innovation Solution
The proposed solution involves forming vertical conductive connections outside the active area of the sensor devices by creating trenches in the safety regions of the wafer, allowing for electrical coupling between the front and back regions of the sensor devices without occupying the active area, thereby maximizing the sensitive area and reducing the overall module size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vertical conductive connections (TSVs) are formed within the active area of sensor devices, then electrical connection between front and back regions is enabled, but the active area is reduced and fill factor decreases
Solution Approach 1:
The patent extracts the vertical conductive connections from the active area and relocates them to the safety regions. This separation allows the active area to be fully utilized for sensor functions while the conductive connections perform their electrical coupling function in the previously wasted safety regions, directly resolving the contradiction between enabling electrical connection and preserving active area.
Solution Approach 2:
The patent utilizes the vertical dimension and the peripheral safety region dimension to place conductive connections, rather than confining them to the horizontal active area. By forming trenches in the safety regions that extend vertically through the substrate, the solution creates a three-dimensional arrangement that separates the electrical connection function from the active sensing area, effectively resolving the area conflict.
2Reliability
If conventional wire-bonding techniques are used for electrical connection, then electrical connection between pads and devices is enabled, but area occupation increases and module dimensions increase
Solution Approach 1:
The patent extracts the electrical connection function from the traditional wire-bonding approach with large pad areas and relocates it to vertically integrated conductive connections formed within the substrate thickness. This eliminates the need for large peripheral pads and wire-bonding space, directly reducing the module area while maintaining electrical connection reliability.
Solution Approach 2:
The patent transitions from a two-dimensional wire-bonding connection method (requiring large peripheral pads on the substrate surface) to a three-dimensional vertical connection method (TSVs) that passes through the substrate thickness. This dimensional change allows electrical connections to be made through the substrate rather than around it, significantly reducing the module footprint.
3Area of stationary object
If vertical conductive connections are formed to reduce area occupation, then lateral approach between dies is improved, but fill factor increase is not guaranteed due to occupation of active area
Solution Approach 1:
The patent extracts the vertical conductive connections from the active area and places them exclusively in the safety regions. This ensures that the active area is completely free for sensor functionality, maximizing the fill factor while still achieving compact lateral arrangement of dies through the reduced module area enabled by the peripheral placement of connections.
Data Source
AI summary
An embodiment of a die comprising: a semiconductor body including a front side, a back side, and a lateral surface; an electronic device, formed in said semiconductor body and including an active area facing the front side; a vertical conductive connection, extending through the semiconductor body and defining a conductive path between the front side and the back side of the semiconductor body; and a conductive contact, defining a conductive path on the front side of the semiconductor body, between the active area and the vertical conductive connection, wherein the vertical conductive connection is formed on the lateral surface of the die, outside the active area.