Vertical Conductive Members Stabilize Resistance in Semiconductor Layers
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining stable resistance levels due to stress-induced variations in resistance elements, which also hinder size reduction and integration.
Innovation Solution
The semiconductor device design includes a semiconductor layer with conductive members and insulating films, where the length of the conductive members in the Z direction is greater than their width and thickness, and the distance between them, allowing for increased resistance in the Z direction, reducing stress effects and enabling downsizing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the resistance element is designed with conventional dimensions and layout, then the device size can be reduced, but the resistance varies under stress application
Solution Approach 1:
The conductive members are configured with a vertical orientation extending from the lower surface to the upper surface of the semiconductor layer, utilizing the Z-direction dimension. This vertical arrangement changes the conventional lateral layout, allowing the resistance element to maintain stable resistance characteristics under stress while fitting within a compact footprint area.
Solution Approach 2:
The patent introduces insulating films selectively at specific locations - covering side surfaces of conductive members and filling spaces between them - to create localized electrical isolation. This selective insulation approach ensures stable resistance by preventing unwanted current paths while maintaining a relatively simple overall structure.
2Reliability
If conductive members are added with insulating films for isolation, then resistance stability improves, but device size increases
Solution Approach 1:
The insulating films are nested within the three-dimensional structure formed by the vertically extending conductive members. The insulating films occupy the spaces between and around the conductive members, utilizing the vertical dimension efficiently. This nesting approach provides necessary electrical isolation without significantly increasing the horizontal footprint area.
Solution Approach 2:
By transitioning from a lateral to a vertical configuration, the patent accommodates additional structural elements (conductive members and insulating films) within the Z-direction dimension. This dimensional transition allows the resistance element to achieve stable resistance characteristics while maintaining a compact planar footprint, thus not significantly increasing overall device volume.
3Reliability
If the conductive members are made longer in the Z direction, then stress effects are reduced, but manufacturing complexity increases
Solution Approach 1:
The conductive members are formed to extend vertically through the semiconductor layer thickness in the Z-direction, creating a through-depth structure. This vertical configuration allows the current path to be predominantly along the Z-axis, making the resistance less sensitive to lateral stress variations. The manufacturing process utilizes standard vertical etching and filling techniques, maintaining ease of fabrication despite the increased Z-direction dimension.
Data Source
AI summary
A semiconductor device includes a semiconductor layer of a first conductivity type, a first semiconductor portion of a second conductivity type provided in the semiconductor layer, first and second conductive members, each having an upper end reaching an upper surface of the semiconductor layer and a lower end connected to the first semiconductor portion, and first and second insulating films covering side surfaces of the first and second conductive members, respectively. A length from the upper end to the lower end of the first conductive member is greater than a total of a length of the first conductive member, a distance between the first conductive member and the second conductive member, and a length of the second conductive member in a direction from the first conductive member toward the second conductive member that is parallel to the upper surface of the semiconductor layer.