Vertical Coupling Structure for Non-Adjacent Resonators

The patent transitions from planar arrangement to three-dimensional vertical stacking of resonators. By utilizing the thickness direction (Z-axis) in addition to the planar dimensions, multiple resonators can be arranged vertically at different heights, enabling coupling between non-adjacent resonators without requiring additional planar area. This dimensional transition resolves the contradiction by providing arrangement flexibility while maintaining compact footprint.

The patent implements a nested vertical stacking configuration where resonators are positioned at different height levels within a compact vertical space. The resonators are nested in the thickness direction, with upper and lower resonators coupled through vertical coupling structures. This nesting approach allows non-adjacent resonators to interact while occupying minimal planar area, simultaneously achieving arrangement flexibility and area efficiency.

The patent merges the coupling function with the resonator structure itself by forming vertical coupling structures that are integrated into the resonator bodies. The coupling structures are formed as continuous extensions of the resonator conductors through the dielectric layers, eliminating the need for separate, additional coupling mechanisms. This integration reduces device complexity while maintaining the capability to couple non-adjacent resonators.

The patent introduces dielectric layers as intermediary elements between vertically stacked resonators. These dielectric layers provide the necessary electrical isolation while allowing magnetic coupling between the resonators at different heights. The intermediary dielectric structure enables coupling capability without requiring complex direct mechanical or electrical connections, thereby reducing overall device complexity.

The patent transitions from a flat two-dimensional SIW structure to a three-dimensional vertical configuration. By stacking resonators vertically and utilizing vertical coupling structures, the electromagnetic energy path is shortened and more direct coupling is achieved between resonators. This reduces the effective metal loss while maintaining the manufacturing advantages of planar SIW technology, as the vertical structures can still be fabricated using standard multilayer PCB processes.

The patent employs composite multilayer structures combining dielectric materials with conductive layers to form the vertical resonator and coupling structures. The use of low-loss dielectric materials between the conductive resonator elements reduces overall energy loss while maintaining cost-effective manufacturing through standard multilayer fabrication techniques. This composite approach addresses the metal loss issue while preserving ease of manufacture.