Vertical Semiconductor Die With Integrated Lateral Transistor Isolation
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Solution Overview
Problem
Existing semiconductor dies with vertical transistor devices face challenges in integrating lateral transistor devices effectively, particularly in achieving simplified junction isolation and optimizing operational performance without complicating the standard process.
Innovation Solution
Incorporating a lateral transistor device into the same semiconductor body with a well region of opposite doping type, allowing for junction isolation and potentially simplifying the integration process by sharing manufacturing steps with the vertical device, such as using the same gate trench and implantation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a lateral transistor device is integrated into the same semiconductor body with a vertical transistor device, then additional functionality and optimized operational performance are achieved, but the device complexity increases
Solution Approach 1:
The patent combines a lateral transistor device and a vertical transistor device into a single semiconductor body, sharing common structures such as the gate trench, body region, and source/drain regions. This merging approach enables additional functionality while reducing overall device complexity through shared components and processes.
Solution Approach 2:
The semiconductor body serves multiple functions by accommodating both lateral and vertical transistor devices that can operate independently or in conjunction. The body region and gate structure are designed to support both device types, creating a multi-functional integrated structure that optimizes operational performance.
2Ease of manufacture
If a well region is used for junction isolation between lateral and vertical devices, then the integration process is simplified by sharing manufacturing steps, but the manufacturing precision requirements increase
Solution Approach 1:
The well region formation is performed simultaneously for both the lateral and vertical transistor devices using a single doping process step. This combined approach simplifies the manufacturing process by eliminating separate isolation steps while requiring precise control of doping parameters to achieve the desired junction characteristics.
Solution Approach 2:
The patent utilizes controlled doping parameters (concentration, depth, lateral spread) of the well region to achieve both junction isolation and device formation functions. By precisely adjusting these doping parameters, the process achieves simplified manufacturing while meeting the required manufacturing precision for device operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables optimized operational performance of vertical devices by allowing additional functionality, such as improved breakdown voltage and reduced on-resistance, while maintaining a simplified integration process.
Implementation Method 1
the lateral device is embedded into a well region made of a second doping type opposite to the source and drain doping of the vertical device
Data Source
AI summary
The disclosure relates to a semiconductor die with a semiconductor body. The semiconductor die includes a vertical transistor device having a source region and a drain region at opposite sides of the semiconductor body, the source region and the drain region being of a first doping type. The semiconductor die also includes a lateral transistor device having: a source region and a drain region at the same side of the semiconductor body; a body region laterally between the source region and the drain region; and a gate electrode. The gate electrode of the lateral transistor device is disposed in a gate trench laterally aside the body region. The lateral transistor device is disposed in a well region of a second doping type opposite to the first doping type.