Vertical Fence Structures for Semiconductor Electrode Isolation
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Solution Overview
Problem
Existing semiconductor technologies face challenges in disposing electrodes through isolation and dummy isolation insulating layers in multi-stack structures of three-dimensional nonvolatile memory devices, leading to difficulties in achieving compactness and high integration.
Innovation Solution
The implementation of vertical fence structures that penetrate the electrode stack and surround the through electrode region, with inner and outer vertical fence structures arranged to maintain precise spacing and prevent the bridging of electrodes, allowing for efficient formation and isolation of insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If vertical structures are disposed through the electrode stack, then the electrode can penetrate the isolation insulating layers and dummy isolation insulating layers, but it becomes difficult to achieve compactness and high integration
Solution Approach 1:
The patent transitions from horizontal electrode disposal to vertical electrode disposal by forming vertical structures that penetrate through the electrode stack in the depth dimension. This dimensional change allows electrodes to pass through multiple insulating layers vertically, solving the manufacturing difficulty while maintaining compactness through the Z-axis penetration rather than lateral expansion
2Ease of operation
If the distance between vertical structures is increased to facilitate electrode disposal, then electrode placement becomes easier, but the device compactness and integration density decrease
Solution Approach 1:
The patent segments the electrode disposal path into multiple vertical structures distributed across the electrode stack. Each vertical structure serves as an independent channel for electrode passage, allowing precise control of spacing and placement while maintaining high integration density through optimized segmentation of the vertical space
3Reliability
If vertical fence structures are added to surround the through electrode region, then electrode bridging is prevented and isolation is improved, but device complexity increases
Solution Approach 1:
The patent introduces vertical fence structures as intermediary elements between the vertical structures and the through electrode region. These fence structures act as protective mediators that prevent direct contact and potential bridging between electrodes while maintaining the overall structural simplicity through their straightforward vertical configuration
Data Source
AI summary
Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.