Vertical Gate-All-Around Transistor with Magnetic Tunnel Junction
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Solution Overview
Problem
The semiconductor industry faces challenges in increasing functional density and reducing geometry size in integrated circuits, leading to complexities in fabrication and design, particularly in three-dimensional designs like FinFETs, where efficient manufacturing processes for high-density memory devices are needed.
Innovation Solution
The development of a semiconductor device with a memory region that includes an array of memory cells, each comprising a vertical gate-all-around transistor and a magnetic tunnel junction, where the transistor acts as a selector, integrated within the interconnection region, utilizing stacked metallization levels and high-k dielectric materials to enhance integration density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional designs like FinFETs are used to increase functional density, then the number of interconnected devices per chip area increases, but fabrication complexity increases
Solution Approach 1:
The patent transitions from planar two-dimensional transistor designs to three-dimensional vertical gate-all-around transistor structures. This dimensional change allows functional density to increase by stacking transistor layers vertically while maintaining manageable fabrication processes through sequential deposition and etching steps that build the 3D structure layer by layer
2Quantity of substance
If geometry size is decreased to increase functional density, then more devices fit per chip area, but manufacturing precision requirements increase
Solution Approach 1:
The vertical gate-all-around transistor structure nests multiple functional layers (gate electrodes, dielectric layers, conductive layers, magnetic tunnel junctions) within a compact vertical stack. This nesting approach achieves high device density without requiring extreme geometry miniaturization, as each layer is formed with standard precision through sequential processing steps rather than requiring single-step ultra-fine patterning
3Productivity
If vertical gate-all-around transistors with magnetic tunnel junctions are integrated, then memory density and response speed improve, but device structure complexity increases
Solution Approach 1:
The patent merges memory functionality (magnetic tunnel junctions) with logic transistor structures (vertical gate-all-around transistors) into a unified vertical stack. This consolidation achieves high memory integration density by combining multiple functions in a single compact structure, reducing the need for separate memory and logic regions while managing complexity through integrated fabrication steps
Solution Approach 2:
The vertical transistor stack employs composite material structures including high-k dielectric materials for gate insulation, magnetic materials for tunnel junctions, and conductive materials for electrodes. These composite materials enable enhanced performance (higher density, faster response) while the vertical integration approach manages structural complexity by organizing diverse materials in a systematic stacked architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for high-density non-volatile memory with improved response speed and ultra-low current leakage, achieving efficient integration without increasing transistor density on the substrate and enabling efficient manufacturing processes.
Implementation Method 1
a magnetic tunnel junction, where the transistor acts as a selector
Data Source
AI summary
A semiconductor device includes a semiconductor substrate and an interconnection region disposed on the semiconductor substrate. The interconnection region includes stacked metallization levels, a magnetic tunnel junction, and a transistor. The magnetic tunnel junction is formed on a first conductive pattern of a first metallization level of the stacked metallization levels. The transistor is formed on a second conductive pattern of a second metallization level of the stacked metallization levels. The transistor is a vertical gate-all-around transistor. A drain contact of the transistor is electrically connected to the magnetic tunnel junction by the first conductive pattern of the first metallization level. The second metallization level is closer to the semiconductor substrate than the first metallization level.