Vertical GaN LED Manufacturing via Insulating Pattern Segmentation
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Solution Overview
Problem
Conventional methods for manufacturing vertical GaN-based LEDs often result in damaged light emitting structures due to exposure to plasma during dry etching, leading to deteriorated characteristics and reduced yield.
Innovation Solution
A method involving the formation of an insulating pattern on a substrate to define LED regions, followed by sequential growth of n-type and p-type semiconductor layers, and subsequent removal of the insulating pattern by wet etching to divide the light emitting structure into sections without additional separation processes, thereby avoiding damage and improving bonding strength with a conductive bonding layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Weight of moving object
If dry etching is used to divide the light emitting structure, then the LED regions can be separated, but the GaN layers and active layer can be cracked or damaged due to prolonged plasma exposure
Solution Approach 1:
The patent introduces a patterned insulating layer that segments the light emitting structure into discrete LED regions during the growth process. This segmentation is achieved by forming insulating patterns on the substrate before growing the GaN layers, allowing each LED region to be independently defined and separated without requiring post-growth etching that would expose the structure to damaging plasma.
Solution Approach 2:
The insulating patterns are formed preliminarily before the growth of the light emitting structure. This preliminary action defines the LED regions in advance, so that when the GaN layers and active layer are grown, they are automatically separated into distinct regions without requiring subsequent plasma etching that would cause damage.
2Productivity
If the light emitting structure is divided by dry etching, then LED sections can be obtained, but the characteristics and reliability of the LED are deteriorated
Solution Approach 1:
The patterned insulating layer serves as an intermediary that facilitates the division of the light emitting structure without directly exposing it to damaging plasma. The insulating material acts as a mediator that defines the boundaries between LED sections during growth, eliminating the need for subsequent plasma etching that would compromise manufacturing precision and LED characteristics.
3Ease of manufacture
If sapphire substrate is used, then the light emitting structure can be formed, but heat dissipation is poor and thermal conductivity is low
Solution Approach 1:
The patent changes the substrate parameter from sapphire to a conductive substrate (such as SiC or metal substrate). This parameter change fundamentally improves the thermal conductivity and heat dissipation capability of the LED structure while still allowing for the formation of the light emitting structure. The conductive substrate provides both mechanical support and efficient heat removal pathways.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and yield of vertical GaN-based LEDs by preventing damage from plasma exposure and simplifying the manufacturing process, resulting in improved characteristics and reduced surface failures.
Implementation Method 1
sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure
Implementation Method 2
removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size
Implementation Method 3
the substrate is removed by an LLO process
Data Source
AI summary
The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.