Vertical Gate Electrode Layout With Dummy Channels for Stable Integration
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Solution Overview
Problem
Semiconductor devices face challenges in increasing data processing capacity while reducing component size, requiring enhanced integration of semiconductor elements, which existing vertical transistor structures have not adequately addressed.
Innovation Solution
The semiconductor device incorporates gate electrodes stacked perpendicular to the substrate with varying lengths, subgate electrodes, and dummy channels arranged in specific patterns to improve integration and reliability, including gate connection portions and isolation regions to support the structure and prevent manufacturing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vertical transistor structure is adopted to improve degree of integration, then device integration increases, but manufacturing reliability deteriorates due to gate connection portion collapse
Solution Approach 1:
The patent applies beforehand cushioning by introducing dummy channels in the region where gate connection portions are spaced apart. These dummy channels provide structural support and prevent the collapse of gate connection portions during manufacturing processes, thereby maintaining reliability while enabling the vertical transistor structure for improved integration.
Solution Approach 2:
The patent uses dummy channels as an intermediary element between the gate connection portions. These dummy channels act as a mediating structure that provides mechanical support to the gate connection portions, preventing their collapse during manufacturing while allowing the vertical transistor configuration to achieve higher integration.
2Productivity
If gate connection portions are spaced apart to enable vertical structure, then device integration improves, but structural stability worsens leading to manufacturing defects
Solution Approach 1:
The patent introduces dummy channels in advance in the regions where gate connection portions are spaced apart. This beforehand cushioning provides structural support to maintain stability during manufacturing processes, preventing collapse while enabling the integrated vertical structure.
Solution Approach 2:
The patent applies local quality by selectively placing dummy channels only in specific regions where gate connection portions are spaced apart, rather than uniformly throughout the device. This targeted approach provides structural stability where needed while maintaining the overall integrated design.
3Reliability
If dummy channels are added to prevent collapse, then manufacturing reliability improves, but device complexity increases
Solution Approach 1:
The patent uses local quality by placing dummy channels only in specific regions where gate connection portions are spaced apart, rather than adding them uniformly throughout the device. This minimizes the increase in device complexity while providing the necessary structural support to improve manufacturing reliability.
Solution Approach 2:
The patent applies partial action by introducing dummy channels only where needed - specifically in regions with spaced-apart gate connection portions - rather than adding them to the entire device. This partial approach provides sufficient reliability improvement without unnecessarily increasing overall device complexity.
Data Source
AI summary
A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.