Vertical Gate Stack Layout for Stacked Transistor Interconnection
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Solution Overview
Problem
Existing semiconductor technologies face challenges in forming interconnections between vertically stacked transistors, which hinders the integration density and efficiency of semiconductor devices.
Innovation Solution
A compact vertical semiconductor device is developed with gate stacks that include a main body, an end portion, and a connection portion, where the connection portion is recessed relative to the main body and end portion, facilitating the formation of contacts and series connections between adjacent units without additional interconnection structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If transistors are stacked vertically to increase integration density, then area is reduced, but forming interconnections between transistors becomes difficult
Solution Approach 1:
The gate stack is segmented into three distinct portions: a main body portion, an end portion, and a connection portion. This segmentation allows each portion to serve different functions - the main body for transistor operation, the end for contact formation, and the connection portion for facilitating interconnections between stacked transistors, thereby resolving the interconnection difficulty while maintaining vertical stacking.
Solution Approach 2:
The gate stack extends in the lateral direction beyond the active region, transitioning from a purely vertical structure to one with lateral extension. This dimensional change creates accessible surfaces on the end portion that facilitate contact formation and interconnection between vertically stacked transistors without requiring additional complex interconnection structures.
2Ease of manufacture
If gate stacks extend laterally beyond active region, then contact formation is facilitated, but device complexity increases
Solution Approach 1:
The gate stack exhibits local quality variations with different portions having distinct characteristics. The connection portion has a recessed periphery that creates a localized accessible surface ideal for contact formation, while the main body maintains the standard gate structure for transistor operation. This localized modification facilitates contact formation without fundamentally changing the entire gate stack structure.
Solution Approach 2:
Instead of forming contacts through the substrate from below or using complex lateral routing, the gate stack itself is designed to present accessible surfaces on its end portion. This inverted approach makes the gate stack structure itself the contact interface, simplifying contact formation while the recessed connection portion controls the complexity through its specific geometric configuration.
Data Source
AI summary
A compact vertical semiconductor device and a manufacturing method thereof, and an electronic apparatus including the semiconductor device are provided. According to the embodiments, the vertical semiconductor device may include: a plurality of vertical unit devices stacked on each other, in which the unit devices include respective gate stacks extending in a lateral direction, and each of the gate stacks includes a main body, an end portion, and a connection portion located between the main body and the end portion, and in a top view, a periphery of the connection portion is recessed relative to peripheries of the main body and the end portion; and a contact portion located on the end portion of each of the gate stacks, in which the contact portion is in contact with the end portion.