Vertical Gate Transistor for High Density Light Emitting Devices
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Solution Overview
Problem
Existing light emitting devices face challenges in achieving high pixel density due to the arrangement of transistors and light emitting elements, where the transistor cannot be placed in areas where a through electrode is required.
Innovation Solution
A light emitting device design where a transistor with a gate electrode extending intersecting the substrate's main surface is integrated into the first substrate, allowing for the arrangement of light emitting elements without the need for a through electrode, thereby increasing density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through electrode is arranged in the first substrate to transmit driving signals, then the light emitting element can be driven from the second substrate, but the transistor cannot be arranged in the same portion, reducing pixel density
Solution Approach 1:
The transistor gate electrode extends in the thickness direction (vertical dimension) rather than only in the planar direction. This vertical extension allows the transistor to be positioned above the through electrode without electrical interference, effectively using the third dimension to resolve the spatial conflict between transistor placement and signal transmission requirements
Solution Approach 2:
The transistor structure is divided into separate functional components: the gate electrode extends vertically through the substrate thickness, while source and drain regions are positioned in the planar direction. This segmentation allows independent optimization of signal transmission (through the gate electrode) and transistor functionality (source/drain regions), eliminating the conflict between the two
2Quantity of substance
If the transistor gate electrode extends in the thickness direction intersecting the main surface, then the transistor can be arranged without blocking the through electrode, but the manufacturing process becomes more complex
Solution Approach 1:
The gate electrode serves multiple functions simultaneously: it acts as the transistor control element, provides a pathway for signal transmission through the substrate, and defines the active region boundaries. This multi-functionality reduces the need for separate structures, thereby managing complexity while achieving high pixel density
3Quantity of substance
If the first diffusion region and second diffusion region are arranged in the intersecting direction, then the transistor can be positioned without blocking the through electrode, but the layout flexibility is reduced
Solution Approach 1:
The transistor structure employs asymmetric arrangement where the gate electrode extends vertically while source and drain regions are positioned horizontally. This asymmetric configuration optimizes space utilization by directing different components along different axes, enabling higher density while maintaining layout adaptability through the vertical gating mechanism
Data Source
AI summary
A light emitting device is provided. The device includes a first substrate that includes a first main surface and a second main surface on which a light emitting element is arranged, and a second substrate bonded to the first main surface. A transistor configured to control the light emitting element is arranged in the first substrate, the transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region arranged in the first main surface and functioning as one of a source region and a drain region, and a second diffusion region arranged in the second main surface and functioning as another of the source region and the drain region, and the first diffusion region and the second diffusion region are arranged in the intersecting direction.