Vertical Gate Semiconductor Structure With Void Insulation
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Solution Overview
Problem
Conventional planar MOS transistors face challenges in scaling down due to limitations in reducing transistor dimensions and improving performance, necessitating the development of three-dimensional transistor technologies.
Innovation Solution
A semiconductor device with a void in its insulation structure is designed, featuring a gate structure, source structure, and semiconductor structure, where the void is incorporated to reduce the dielectric constant and enhance operational performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional planar MOS transistor scaling is continued, then transistor density increases, but performance deteriorates due to dimensional limitations
Solution Approach 1:
The patent transitions from planar two-dimensional transistor structures to three-dimensional vertically-oriented transistor structures. The gate electrode extends vertically along the sidewalls of the semiconductor structure, enabling increased transistor density without compromising performance by utilizing the vertical dimension for channel formation and gate control.
Solution Approach 2:
The gate electrode is positioned within and surrounds the semiconductor structure in a nested configuration. The gate dielectric layer is disposed between the gate electrode and the semiconductor structure, creating a nested arrangement where the gate electrode encompasses the semiconductor structure while maintaining electrical isolation through the dielectric layer.
2Quantity of substance
If transistor dimensions are reduced to increase density, then more devices fit on chip, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
By moving to vertical three-dimensional structures, the patent achieves higher device density without proportionally reducing lateral dimensions. The vertical orientation allows for larger lateral feature sizes that are easier to manufacture with precise dimensional control, while still achieving high density through the vertical stacking and sidewall gate configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The void in the insulation structure improves the operational performance of the semiconductor device by reducing the dielectric constant and supporting the semiconductor structure, facilitating smaller transistor dimensions and higher performance.
Implementation Method 1
A void is formed in an insulation structure surrounded by a semiconductor structure for improving operation performance of the semiconductor device
Data Source
AI summary
A semiconductor device and a manufacturing method thereof are disclosed in the present invention. The semiconductor device includes a source structure; a gate structure disposed above the source structure; a first opening penetrates through the gate structure in a vertical direction; a semiconductor structure; a gate dielectric layer; an insulation structure; and a void. The semiconductor structure is partially disposed in the first opening, and at least a portion of the gate structure is located at two opposite sides of the semiconductor structure in a horizontal direction. The gate dielectric layer is disposed in the first opening and located between the semiconductor structure and the gate structure. At least a portion of the insulation structure is disposed in the first opening, at least a portion of the semiconductor structure is located between the insulation structure and the gate dielectric layer, and the void is located in the insulation structure.