Vertical Hall Element Calibration via Excitation Conductor Width Ratio
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Solution Overview
Problem
Existing semiconductor devices face challenges in accurately calibrating vertical Hall elements due to reduced calibration magnetic field intensity and increased heat generation, which degrades the accuracy of sensitivity estimation and causes temperature distribution in peripheral circuits, especially in miniaturized devices.
Innovation Solution
A semiconductor device design where the excitation conductor is positioned directly above the vertical Hall element with an insulating film, and the ratio of the excitation conductor's width to the electrode width is maintained between 0.3 and 1.0, minimizing heat generation and ensuring a stronger calibration magnetic field while preventing temperature distribution in peripheral circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the horizontal distance between the excitation conductor and the vertical Hall element is increased, then the calibration magnetic field intensity becomes small, but the accuracy in estimating actual sensitivity degrades
Solution Approach 1:
The excitation conductor is positioned directly above the vertical Hall element in the vertical dimension rather than being separated in the horizontal dimension. This dimensional change allows the calibration magnetic field to be applied effectively while maintaining proper spatial relationship between components.
Solution Approach 2:
The width ratio WC/WH of the excitation conductor is optimized within the range 0.3≤WC/WH≤1.0. This parameter optimization ensures sufficient calibration magnetic field intensity while controlling heat generation, resolving the contradiction between field strength and temperature effects.
2Temperature
If the current flowing through the excitation conductor is increased to enlarge the intensity of the calibration magnetic field, then the calibration magnetic field intensity becomes large, but heat generation increases causing temperature distribution in peripheral circuits
Solution Approach 1:
The width ratio WC/WH of the excitation conductor is optimized within the range 0.3≤WC/WH≤1.0. This parameter optimization ensures sufficient calibration magnetic field intensity while controlling heat generation, resolving the contradiction between field strength and temperature effects.
Solution Approach 2:
An insulating film is introduced as an intermediary between the excitation conductor and the vertical Hall element. This allows direct vertical positioning for strong magnetic field coupling while electrically isolating the components to prevent unwanted current paths and heat transfer.
3Temperature
If the excitation conductor is positioned close to the vertical Hall element, then the calibration magnetic field intensity becomes large, but the excitation conductor approaches peripheral circuits causing temperature distribution
Solution Approach 1:
The excitation conductor is positioned directly above the vertical Hall element in the vertical dimension rather than being separated in the horizontal dimension. This dimensional change allows the calibration magnetic field to be applied effectively while maintaining proper spatial relationship between components.
Solution Approach 2:
An insulating film is introduced as an intermediary between the excitation conductor and the vertical Hall element. This allows direct vertical positioning for strong magnetic field coupling while electrically isolating the components to prevent unwanted current paths and heat transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the intensity of the calibration magnetic field applied to the vertical Hall element, allowing for high-accuracy calibration while reducing heat generation and maintaining the integrity of peripheral circuits, even in miniaturized devices.
Implementation Method 1
a current flows through an excitation conductor disposed in the vicinity of a vertical Hall element to thereby generate a calibration magnetic field having a predetermined magnetic flux density in the position of the Hall element
Implementation Method 2
measuring a change in a Hall voltage supplied from the Hall element during the application of the calibration magnetic field
Data Source
AI summary
A semiconductor device includes a semiconductor substrate 10 of a first conductivity type, a vertical Hall element 100 provided on the semiconductor substrate 10, and an excitation conductor 200 provided directly above the vertical Hall element 100 with an intermediation of an insulating film 30. The vertical Hall element 100 includes a semiconductor layer 101 of a second conductivity type provided on the semiconductor substrate 10, and a plurality of electrodes 111 through 115 each constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layer 101 along a straight line. A ratio WC/WH between a width WC of the excitation conductor 200 and a width WH of each of the plurality of electrodes 111 through 115 satisfies 0.3≤WC/WH≤1.0.