Vertical Hall Element Depth-Enhanced Magnetic Sensitivity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing vertical Hall elements have limited magnetic sensitivity due to a narrow current flow width in the direction parallel to the substrate, resulting in reduced sensitivity in detecting horizontal magnetic fields.
Innovation Solution
The semiconductor device incorporates a vertical Hall element with drive current supply electrodes having a larger depth than Hall voltage output electrodes and electrode isolation diffusion layers, allowing current to flow widely in the depth direction of the semiconductor layer, thereby increasing magnetic sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If drive current supply electrodes are configured with trenches and insulating films to eliminate perpendicular current components, then current flows predominantly parallel to substrate, but the width of current flow in depth direction becomes small
Solution Approach 1:
The patent extends the drive current supply electrode in the depth direction (vertical dimension) beyond the electrode isolation diffusion layer, transforming a two-dimensional surface electrode configuration into a three-dimensional structure. This dimensional extension increases the width of current flow in the depth direction, thereby improving magnetic sensitivity without compromising the directional control of current flow achieved by the trench structure.
2Measurement precision
If current flows between contact regions in bottom portions of trenches, then perpendicular current components are eliminated, but current concentrates along shortest path between contact regions
Solution Approach 1:
By extending the drive current supply electrode in the depth direction beyond the electrode isolation diffusion layer, the patent creates additional current flow paths in the vertical dimension. This three-dimensional electrode configuration distributes current more uniformly across the magnetism sensing portion, preventing concentration along the shortest horizontal path between contact regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the magnetic sensitivity of the Hall element by ensuring current flows over the entire region from the bottom portions of the electrode isolation diffusion layers to the drive current supply electrodes, improving detection capabilities.
Implementation Method 1
A Hall element is capable of detecting position or angle without contact as a magnetic sensor... there have been proposed various magnetic sensors that use a vertical Hall element configured to detect magnetic field components parallel to a substrate surface (horizontal magnetic field)
Implementation Method 2
each of the plurality of electrodes including an impurity region of the second conductivity type that has a concentration that is higher than the concentration of the semiconductor layer
Data Source
Figure 1A~1B
Figure 2
Figure 3A~3B
AI summary
The vertical Hall element includes: a second conductivity type semiconductor layer; electrodes aligned along a straight line in a surface of the semiconductor layer, and each include a second conductivity type impurity region that is higher in concentration than semiconductor layer; and first conductivity type electrode isolation diffusion layers isolating the electrodes from one another, each of the electrode isolation diffusion layers being provided between each pair of the electrodes in the surface of the semiconductor layer, the electrodes including an electrode that functions as a drive current supply electrode and an electrode that functions as a Hall voltage output electrode, the drive current supply electrode and the Hall voltage output electrode being arranged alternately, the Hall voltage output electrode having a first depth, the drive current supply electrode having a second depth that is larger than the first depth and a depth of the electrode isolation diffusion layers.