Vertical Hall Effect Sensors With Deep Trench Isolation
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Solution Overview
Problem
Existing Hall effect sensors face limitations in depth of implantation and inter-diffusion issues, which hinder the development of compact and efficient magnetic field sensing devices.
Innovation Solution
The development of vertical Hall effect sensors with deep trench structures in a thick epitaxial semiconductor material, utilizing buried isolation layers and shallower trench structures, allows for deeper dopant penetration without tool limitations, enhancing sensitivity and compactness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional implantation methods are used, then manufacturing process is simple, but depth of implantation is limited and inter-diffusion occurs
Solution Approach 1:
The device is segmented into distinct depth zones using multiple trench structures: deep trenches extending to the buried isolation layer for high-depth contacts, and shallower trenches for intermediate-depth contacts. This segmentation allows each trench type to be optimized for its specific depth requirement, achieving deep implantation without compromising the overall structural integrity.
Solution Approach 2:
The patent introduces a vertical dimension hierarchy with trenches at different depths (deep trenches to buried isolation layer, shallower trenches at intermediate depths) rather than relying on a single implantation depth. This multi-level vertical arrangement enables deep dopant penetration while maintaining structural organization and avoiding inter-diffusion through proper spatial separation.
2Measurement precision
If deeper dopant penetration is achieved, then sensitivity is enhanced, but inter-diffusion and tool limitations occur
Solution Approach 1:
The buried isolation layer acts as an intermediary barrier that prevents inter-diffusion between differently doped regions. By extending deep trenches to this isolation layer, the patent creates a controlled interface that allows deep dopant penetration for enhanced sensitivity while the isolation layer itself prevents unwanted diffusion, thus maintaining reliability.
Solution Approach 2:
Different regions of the semiconductor structure are assigned different doping qualities: deep trenches reach the buried isolation layer for high-depth contacts requiring maximum sensitivity, while shallower trenches provide intermediate-depth contacts with appropriate doping levels. This local differentiation of doping depth and concentration optimizes sensitivity in each region while preventing inter-diffusion through the isolation layer barrier.
3Volume of moving object
If compact sensor design is implemented, then device size is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The compact sensor design is achieved by segmenting the contact structure into deep trenches and shallower trenches, each serving specific functional requirements. This segmentation allows the sensor to maintain a compact footprint while accommodating multiple contact depths through vertical differentiation, thereby reducing overall device volume without compromising manufacturing precision.
Solution Approach 2:
The patent resolves the compactness-precision contradiction by transitioning from a two-dimensional planar layout to a three-dimensional vertical structure. Multiple contacts are arranged at different depths (deep trenches to buried isolation layer, shallower trenches at intermediate depths) within a compact planar footprint, effectively utilizing the vertical dimension to reduce sensor size while maintaining precise depth control for each trench type.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables Hall effect sensors with improved sensitivity and compact size, free from inter-diffusion and current implant tool constraints, suitable for advanced applications in integrated circuits and system on chip technology.
Implementation Method 1
deeper dopant penetration without tool limitations
Implementation Method 2
Hall effect sensors are used for picking up on the voltage induced on the conductor by the magnetic field
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to Hall effect sensors and methods of manufacture. The structure includes: a semiconductor material; a buried isolation layer below the semiconductor material; a deep trench structure having conductive material and within the semiconductor material and contacting the buried isolation layer; a plurality of shallower trench structures having the conductive material and partially within the semiconductor material and remote from the buried isolation layer; and a doped region within the semiconductor material adjacent to the plurality of shallower trench structures.