Vertical Hot Filament HFCVD for Uniform Diamond Film Deposition

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Solution Overview

Problem

Existing HFCVD devices face issues with uneven film deposition due to thermal expansion and gravity affecting filament position, fragility of hot filaments, low coating efficiency due to monofilament single-sided coating, high production costs, and slow production cycles.

Innovation Solution

A HFCVD device with a vertical hot filament layout, continuous substrate transfer between two growth chambers, and dual-sided coating to maintain consistent filament distance and substrate distribution, enabling continuous film deposition and reducing filament breakage and installation costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If horizontal hot filament is used, then device complexity is reduced, but manufacturing precision deteriorates due to thermal expansion and gravity affecting filament position

Engineering Contradiction:
Improvefilament arrangementVSAvoidfilm uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent transitions from horizontal filament arrangement to vertical filament arrangement, changing the spatial dimension of filament placement. This vertical configuration eliminates the problems of thermal expansion and gravity affecting filament position that occur in horizontal arrangements, thereby maintaining manufacturing precision while simplifying device complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Device complexity

If single coating room with sequential processing is used, then device complexity is reduced, but productivity deteriorates due to repeated vacuum and filament installation

Engineering Contradiction:
Improvechamber configurationVSAvoidpreparation efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent divides the coating system into two independent coating rooms, each capable of sequential processing. This segmentation allows one room to undergo vacuum and filament installation while the other room continues coating operations, thereby maintaining productivity without significantly increasing overall device complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

By having two coating rooms operating in parallel with alternating cycles, the system ensures that while one room is being prepared (vacuum, filament installation), the other room is continuously performing coating operations. This continuity eliminates idle time and maintains high productivity.

Inventive Principle:
Principle #20Continuity of useful action

3Device complexity

If monofilament single-sided coating is used, then device complexity is reduced, but productivity deteriorates due to limited coating area

Engineering Contradiction:
Improvefilament configurationVSAvoidcoating efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent introduces dual-sided coating capability by arranging substrates on both sides of the vertical filament, utilizing the vertical space dimension. This allows simultaneous coating of both sides of substrates, effectively doubling the coating area and productivity without significantly complicating the filament configuration.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Manufacturing precision

If repeated vacuum and filament installation is performed, then manufacturing precision is maintained, but loss of time increases due to production cycle interruptions

Engineering Contradiction:
Improvefilm qualityVSAvoidproduction cycle
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent performs vacuum and filament installation in advance during the preparation phase of one coating room while the other room is actively coating. This preliminary action ensures that when the first room needs maintenance, the second room is already ready to take over, thereby maintaining film quality without interrupting the overall production cycle.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

By alternating operations between two coating rooms, the system ensures that while one room undergoes vacuum and filament installation (preparation), the other room continues coating operations. This continuity eliminates production cycle interruptions and maintains both manufacturing precision and productivity.

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution ensures uniform diamond film deposition, reduces filament consumption, enhances coating efficiency, and lowers production costs by allowing continuous operation and simultaneous coating on both sides of the filaments.

Implementation Method 1

Hot Filament Chemical Vapor Deposition (HFCVD) diamond film preparation method

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 2

the physical changes of the hot filament caused by its thermal expansion

Methodology Applied
Scientific EffectThermal decomposition: Pyrolysis

Implementation Method 3

left chamber water-cooled electrode, a right chamber water-cooled electrode

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 4

for vacuum, carbonization, coating, cooling down, vacuum breaking

Methodology Applied
Scientific EffectVacuum: Vacuum

Data Source

PatentUS11939669B2Coating method for continuous preparation of diamond thin film with HFCVD device
Publication Date: 2024.03.26 INST OF METAL RESEARCH - CHINESE ACAD OF SCI
  • US11939669B2 patent drawing
  • US11939669B2 patent drawing
  • US11939669B2 patent drawing

AI summary

A coating method for preparing diamond thin film continuously by HFCVD device includes the steps of: (a) carbonizing left and right chamber hot filaments; (b) disposing a substrate on a platform along with a trolley in a sample access chamber under vacuum condition; opening a left chamber gate valve and moving the substrate to left thin film growth chamber; closing the left chamber gate valve to grow diamond thin film on the substrate; (c) repeating step (b) by using a right chamber gate valve and right thin film growth chamber to grow diamond thin film; (d) opening the left chamber gate valve and moving the substrate to the sample access chamber; closing the left chamber gate valve and dropping to room temperature while under vacuum condition; releasing the vacuum condition and taking out the substrate with diamond thin film; (e) repeating step (d) for the right chamber gate valve.