Vertical Semiconductor Inductor with Shielding Structure
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Solution Overview
Problem
Conventional electronic components on semiconductor ICs face issues such as excess space consumption, poor device performance, inadequate shielding, and high fabrication costs, limiting their effectiveness in complex circuit designs.
Innovation Solution
A semiconductor device is fabricated with an integrated inductor capacitor (LC) tank that includes a shielding structure surrounding the inductor coil, allowing the capacitor to be positioned inside the inductor without interference, utilizing a slot-type shielding configuration to create a slow-wave effect and reduce form factor, while also enabling flexible inductance value adjustment and precise resonant frequency tuning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional electronic components are formed on semiconductor IC, then functional density increases, but space consumption increases and device performance deteriorates
Solution Approach 1:
The capacitor is positioned inside the inductor coil structure, with the inductor coil forming a nested configuration around the capacitor. This nesting arrangement allows both components to occupy the same spatial region, significantly increasing functional density while reducing overall space consumption on the semiconductor IC.
Solution Approach 2:
The inductor coil is configured in a vertical orientation extending along the Z-axis, transitioning from conventional planar layouts to three-dimensional structures. This dimensional change enables better space utilization and allows the capacitor to be integrated within the coil's vertical structure, improving both density and performance.
2Productivity
If conventional electronic components are formed on semiconductor IC, then functional density increases, but shielding effectiveness deteriorates
Solution Approach 1:
A shielding structure is introduced as an intermediary element between the inductor coil and the capacitor. This shielding structure, positioned within the coil structure, effectively blocks electromagnetic interference and noise from affecting the capacitor, thereby improving shielding effectiveness while maintaining the integrated high-density configuration.
3Productivity
If conventional electronic components are formed on semiconductor IC, then functional density increases, but fabrication cost increases
Solution Approach 1:
The inductor and capacitor are merged into a single integrated structure where the capacitor is positioned inside the inductor coil. This merging eliminates the need for separate fabrication processes and interconnections between discrete components, simplifying manufacturing and reducing fabrication costs while achieving high functional density.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces circuit area usage, enhances immunity to surrounding configurations, lowers thermal noise, and allows for more precise resonant frequency adjustment, thereby improving device performance and reducing fabrication costs.
Implementation Method 1
utilizing a slot-type shielding configuration to create a slow-wave effect and reduce form factor
Implementation Method 2
lowers thermal noise
Data Source
AI summary
The present disclosure involves a semiconductor device. The semiconductor device includes a substrate; a capacitor disposed over the substrate; an inductor disposed over the substrate and having a coil feature surrounding the capacitor; and a shielding structure over the substrate and configured around the coil feature.