Vertical Interconnect Posts for POP Modules Without Via Drilling

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Solution Overview

Problem

Conventional via formation in semiconductor devices, such as through silicon vias (TSV) and through mold vias (TMV), involves costly laser drilling or etching processes, increasing manufacturing costs due to specialized equipment and additional steps.

Innovation Solution

Formation of vertical interconnect structures without etching, drilling, or laser direct ablation (LDA) by using photoresist patterning and metal deposition processes to create conductive posts, followed by encapsulation and singulation, reducing the need for costly etching and drilling steps.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If laser drilling or etching processes are used to form via holes, then vertical electrical interconnects can be achieved, but manufacturing costs increase due to specialized equipment and additional process steps

Engineering Contradiction:
Improvevertical electrical interconnectVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the costly laser drilling and etching steps from the manufacturing process. Instead of using specialized equipment to create via holes, the invention uses a photoresist-based planarization process that forms conductive posts directly, removing the need for expensive via formation equipment and reducing process complexity while maintaining reliable vertical electrical interconnects

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent replaces the mechanical/thermal laser drilling and plasma etching systems with a photochemical process. The photoresist pattern is formed using UV light exposure and chemical development, substituting costly mechanical/thermal field systems with optical and chemical fields, thereby reducing equipment costs and process complexity

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If laser drilling or etching processes are used to form via holes, then vertical electrical interconnects can be achieved, but process complexity increases due to additional manufacturing steps

Engineering Contradiction:
Improvevertical electrical interconnectVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the via hole formation and conductive material deposition into a single integrated process step. The photoresist pattern acts as both the via definition and the conductive fill template, eliminating the need for separate via drilling/etching and metal deposition steps, thereby reducing process complexity while ensuring reliable electrical interconnects

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The photoresist pattern serves multiple functions simultaneously: it defines the via hole location, acts as the conductive material template, and provides the structural framework for the vertical interconnect. This multi-functionality eliminates the need for separate process steps for each function, reducing overall process complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Reduces manufacturing costs and complexity by eliminating the need for specialized etching and drilling equipment, while maintaining effective electrical interconnects, thereby enhancing the efficiency and cost-effectiveness of semiconductor device production.

Implementation Method 1

A photoresist layer is formed over the encapsulant and exposed to UV light through a photomask

Methodology Applied
Scientific EffectPhotoresist patterning: Photopolymerisation

Implementation Method 2

Metal deposition processes to create conductive posts

Methodology Applied
Scientific EffectMetal deposition: Physical Vapour Deposition

Data Source

PatentUS12525587B2Semiconductor device and method of forming vertical interconnect structure for pop module
Publication Date: 2026.01.13 STATS CHIPPAC LTD
  • US12525587B2 patent drawing
  • US12525587B2 patent drawing
  • US12525587B2 patent drawing

AI summary

A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.