Vertical Interconnect Structure for High Density Semiconductor Packaging
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Solution Overview
Problem
Current semiconductor devices face limitations in achieving high I/O density due to the height and pitch constraints imposed by traditional bump interconnects, which restricts the miniaturization and performance of electronic devices.
Innovation Solution
The development of a vertical interconnect structure using stud bumps or conductive columns with a fixed offset between the semiconductor die and substrate, allowing for a non-fusible or fusible connection that reduces pitch and increases I/O density, while also providing mechanical support and environmental protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional bump interconnects are used, then mechanical support and environmental protection are provided, but pitch constraints and height limitations restrict I/O density and miniaturization
Solution Approach 1:
The patent transitions from planar bump interconnects to vertical pillar interconnects, utilizing the vertical dimension to achieve higher I/O density. The pillars extend perpendicular to the substrate surface, allowing closer spacing in the lateral direction while maintaining mechanical strength through increased height in the vertical direction.
Solution Approach 2:
The patent changes the geometric parameters of the interconnect structure by replacing low-profile bumps with tall, narrow pillars. This parameter change includes increasing the aspect ratio (height to width) of the interconnect elements, which enables reduced pitch while maintaining structural integrity and electrical performance.
2Productivity
If smaller semiconductor devices are produced, then power consumption decreases and performance increases, but manufacturing complexity and contamination risk increase
Solution Approach 1:
The patent replaces traditional mechanical bump formation processes with a vertical pillar growth approach that can be achieved through deposition and etching processes. This substitution enables better control over dimensions and reduced contamination through standard semiconductor fabrication techniques.
Solution Approach 2:
The patent utilizes inert or controlled atmosphere processing during pillar formation to prevent contamination. By conducting manufacturing steps in controlled environments with appropriate gas atmospheres, the risk of oxidation and contamination is minimized during the formation of the vertical interconnect structures.
Data Source
AI summary
A semiconductor device has a semiconductor die and substrate with a plurality of stud bumps formed over the semiconductor die or substrate. The stud bumps include a base portion and stem portion extending from the base portion. The stud bumps include a non-fusible material or fusible material. The semiconductor die is mounted to the substrate with the stud bumps electrically connecting the semiconductor die to the substrate. A width of the base portion is greater than a mating conductive trace formed on the substrate. Alternatively, a vertical interconnect structure, such as a conductive column, is formed over the semiconductor die or substrate. The conductive column can have a tapered sidewall or oval cross sectional area. An underfill material is deposited between the semiconductor die and substrate. The semiconductor die includes a flexible property. The vertical interconnect structure includes a flexible property. The substrate includes a flexible property.