Unipolar TEG Vertical Interconnects for Thermal Focusing

The patent applies dimensionality change by transitioning from traditional planar electrode contacts to three-dimensional vertical interconnect structures. The interconnects extend through the thickness of semiconductor pellets, creating thermal and electrical pathways in the vertical dimension rather than only on the surface. This dimensional extension increases the effective heat transfer area and electrical contact efficiency, thereby significantly boosting power output while managing device complexity through systematic structural repetition.

The patent segments the electrode structure into multiple discrete vertical interconnect elements distributed across the semiconductor pellet surfaces. Instead of a single continuous electrode, the design uses multiple separated interconnect fingers or strips that contact the semiconductor at multiple points. This segmentation increases the total contact area and distributes thermal and electrical stresses, improving overall power output while maintaining manufacturability through standardized patterning processes.

The patent merges the heat exchanger components with the semiconductor pellet assembly into an integrated structure. The vertical interconnect electrodes serve dual functions as both electrical contacts and thermal management elements, eliminating the need for separate heat exchanger assemblies. The hot and cold surfaces are directly formed as part of the semiconductor module structure, combining multiple functions into a single manufacturable unit and thereby reducing overall manufacturing cost while maintaining power generation capability.

The vertical interconnect electrodes are designed to perform multiple functions simultaneously: electrical current collection, thermal conduction for heat exchanger operation, and mechanical structural support. This multi-functionality eliminates the need for separate dedicated components for each function, reducing the number of manufacturing steps and assembly operations required, thereby lowering manufacturing cost while enabling effective thermoelectric conversion.

The patent addresses thermal management in reduced-mass semiconductor structures by extending thermal conduction pathways into the vertical dimension through the interconnect electrodes. These vertical interconnects provide dedicated thermal shunt paths that conduct heat away from the semiconductor pellets efficiently, compensating for the reduced thermal mass. The three-dimensional thermal management architecture maintains effective heat dissipation while using less semiconductor material, thereby reducing cost per watt without compromising thermal management.

The vertical interconnect electrodes serve as intermediary thermal management structures between the semiconductor pellets and the external heat exchanger surfaces. These interconnects act as thermal conduits that efficiently transfer heat from the compact semiconductor mass to the heat dissipation surfaces, enabling effective thermal management in reduced-mass configurations. The intermediary interconnect structure decouples the thermal management function from the semiconductor mass, allowing cost reduction without compromising thermal performance.