Vertical Interconnects for Self-Shielded SiP Modules
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Solution Overview
Problem
Current electromagnetic interference (EMI) shielding solutions for system-in-packages (SiPs) are difficult to integrate and require complex post-singulation metal deposition processes, especially for thin substrates, which can be challenging and process-intensive.
Innovation Solution
The implementation of conductive structures and materials that couple ground rings in the SiP to a shield formed on the upper surface of the encapsulant, allowing for EMI shielding without the need for vertical side-wall deposition or oversputtering techniques, and enabling compartmental shielding within the SiP.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If traditional post-singulation metal deposition processes are used for EMI shielding, then EMI protection is achieved, but manufacturing complexity and process intensity increase significantly
Solution Approach 1:
The patent applies preliminary action by forming conductive structures and shields during the encapsulation process before singulation occurs. The encapsulant is molded with integrated conductive elements that automatically provide EMI shielding pathways, eliminating the need for complex post-singulation metal deposition. This advance preparation of shielding structures resolves the contradiction by achieving EMI protection through a simpler, integrated process.
2Object-affected harmful factors
If post-singulation metal deposition is used to connect shield to ground layers, then EMI shielding is formed, but special handling and equipment are required for thin substrates
Solution Approach 1:
The patent merges the EMI shielding function with the encapsulation process itself. The conductive structures are integrated into the encapsulant molding operation, combining two previously separate processes (encapsulation and shielding formation) into one. This merging eliminates the need for special post-singulation handling and equipment, directly resolving the contradiction between achieving EMI shielding and maintaining ease of manufacture.
3Volume of moving object
If components are located closer together to reduce device size, then miniaturization is achieved, but susceptibility to conducted and radiated EMI increases
Solution Approach 1:
The patent applies local quality by providing targeted EMI protection through conductive structures positioned specifically around vulnerable components and signal pathways within the encapsulant. Rather than requiring increased spacing between all components, localized shielding structures are placed precisely where EMI susceptibility is highest, enabling miniaturization while maintaining EMI immunity through strategically positioned protective elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively inhibits EMI by forming a continuous EMI shield around the SiP components, enhancing their immunity to electromagnetic interference without the complexity of traditional shielding methods, and allowing for easier integration with printed circuit boards.
Implementation Method 1
one or more conductive structures and/or conductive material are used between components in the SiP to provide compartmental shielding within the SiP (e.g., shielding between the components)
Data Source
AI summary
A system in package (SiP) is disclosed that uses an EMI shield to inhibit EMI or other electrical interference on the components within the SiP. A metal shield may be formed on an upper surface of an encapsulant encapsulating the SiP. The metal shield may be electrically coupled to a ground layer in a printed circuit board (PCB) to form the EMI shield around the SiP. The metal shield may be electrically coupled to the ground layer using one or more conductive structures located in the encapsulant. The conductive structures may be located on a perimeter of the components in the SiP. The conductive structures may provide a substantially vertical connection between the substrate and the shield on the upper surface of the encapsulant.