Vertical LED Chip Package with Bypass Electrode Test Contacts
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Solution Overview
Problem
Existing vertical light emitting diode (LED) chip packages face challenges in accurately measuring electrical characteristics due to noise impact and difficulty in distinguishing between semiconductor epitaxial structure and adhesive layer issues, leading to potential local hot spots and reduced reliability, especially in high-current operations.
Innovation Solution
A vertical LED chip package with multiple electrical test contacts, including a P-type bypass detection electrode and lateral extending interface structure, allows for precise measurement of electrical characteristics across semiconductor epitaxial, chip conductive, and package substrate layers, enabling accurate evaluation of epitaxial quality and adhesive layer performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a P-type bypass detection electrode is added to enable separate electrical characteristic measurement, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent segments the electrical measurement function by adding a dedicated P-type bypass detection electrode separate from the main P-type electrode. This allows independent measurement of semiconductor layer electrical characteristics without being affected by adhesive layer resistance, thereby improving measurement precision while maintaining manageable device complexity through functional separation.
Solution Approach 2:
The P-type bypass detection electrode acts as an intermediary measurement point that provides a direct electrical connection to the semiconductor layer through the lateral extending interface structure. This intermediary pathway enables accurate electrical characteristic measurement by bypassing the adhesive layer resistance that would otherwise interfere with the measurement.
2Reliability
If multiple electrical test contacts are added for accurate measurement, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The lateral extending interface structure is designed in advance to provide a built-in low-resistance electrical connection path between the P-type bypass detection electrode and the semiconductor layer. This preliminary structural arrangement simplifies the manufacturing process by pre-establishing the necessary electrical pathways, thereby improving reliability without imposing excessive positioning precision requirements.
Solution Approach 2:
The lateral extending interface structure creates a localized high-conductivity region specifically at the electrode-semiconductor interface. This local quality enhancement ensures low-contact resistance at the critical measurement point while allowing standard manufacturing tolerances elsewhere in the device, thus improving reliability without requiring universal high-precision manufacturing.
3Reliability
If a lateral extending interface structure is implemented to reduce contact resistance, then electrical conductivity is improved, but device complexity increases
Solution Approach 1:
The interface structure extends laterally in the planar dimension rather than only vertically, creating an enlarged contact area between the electrode and semiconductor layer. This dimensional change provides a low-resistance electrical connection pathway that reduces contact resistance while adding minimal structural complexity compared to traditional vertical-only interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables accurate measurement of trace electrical properties and improves the reliability of the LED chip by distinguishing between different structural components, reducing the risk of local hot spots and enhancing the overall performance and credibility of the LED chip.
Implementation Method 1
The lateral extending interface structure includes a high-concentration P-type semiconductor layer, an Ohmic contact layer, and a high conductive metal layer which are stacked successively. The semiconductor epitaxial structure and the P-type bypass detection electrode are respectively arranged on an upper plane of the lateral extending interface structure. The semiconductor epitaxial structure and the chip conductive structure achieve the Ohmic contact by virtue of the lateral extending interface structure.
Data Source
AI summary
The invention comprises a light emitting diode chip and a package substrate. The light emitting diode chip is provided with a semiconductor epitaxial structure, a lateral extending interface structure, a chip conductive structure, an N-type electrode located above the semiconductor epitaxial structure and a P-type bypass detection electrode located on the lateral extending interface structure. The chip conductive structure is provided with a P-type main electrode located on a lower side. The package substrate comprises a plurality of electrode contacts through which the N-type electrode, the P-type bypass detection electrode and the P-type main electrode are connected, and a process quality of a alternative substrate adhesive layer in one of the semiconductor epitaxial structure and the chip conductive structure and a chip-substrate bonding adhesive layer between the P-type main electrode and the package substrate is evaluated by detecting electrical characteristics.