Vertical LED Pixel Structure With Recessed Electrode Light Extraction
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Solution Overview
Problem
Vertical light-emitting diode devices have a non-translucent upper electrode that impedes light emission in a normal direction, limiting their efficiency and brightness.
Innovation Solution
A light-emitting element design featuring a semiconductor layer with microstructures, a through hole, and a recess in the second type semiconductor layer, where the second electrode is positioned within the through hole and recess, enhancing light extraction efficiency and intensity in the normal direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a non-translucent metal electrode is disposed in the center of the vertical light-emitting diode device, then the electrode can provide good electrical connection, but it impedes light emission in the normal direction and reduces light extraction efficiency
Solution Approach 1:
The patent extracts the harmful part (the blocking electrode) from the light emission path by creating a through-hole in the intrinsic semiconductor layer and positioning the electrode within this hole rather than having it cover the entire active area. This allows light to pass through the electrode region without being blocked, while the electrode still provides electrical connection at the bottom of the through-hole.
Solution Approach 2:
The patent applies local quality by creating a recess in the second type semiconductor layer and positioning the electrode specifically within this localized region. The electrode is confined to a specific area (the through-hole and recess region) rather than covering the entire device, allowing different regions to have different functions: the center region for electrical connection and the surrounding regions for light emission.
2Ease of manufacture
If the electrode is positioned in the center of the device, then manufacturing is simplified, but side wall non-radiative recombination increases and light extraction efficiency decreases
Solution Approach 1:
The patent transitions from a two-dimensional planar electrode structure to a three-dimensional structure by creating a through-hole extending through the intrinsic semiconductor layer and forming a recess in the second type semiconductor layer. The electrode is positioned within this vertical dimension, allowing it to make contact at the bottom while minimizing its lateral footprint and reducing side wall exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly improves light extraction efficiency and intensity in the normal direction by minimizing electrode impact on light emission and reducing side wall non-radiative recombination.
Implementation Method 1
The intrinsic semiconductor layer has microstructures
Implementation Method 2
The intrinsic semiconductor layer has a through hole. The second type semiconductor layer has a recess. The through hole of the intrinsic semiconductor layer is connected with the recess of the second type semiconductor layer. The second electrode is disposed in the through hole of the intrinsic semiconductor layer and the recess of the second type semiconductor layer.
Implementation Method 3
A light-emitting element of an embodiment of this disclosure includes a first type semiconductor layer, a second type semiconductor layer, an active layer
Data Source
AI summary
A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, an intrinsic semiconductor layer, a first electrode and a second electrode. The second type semiconductor layer is disposed opposite to the first type semiconductor layer. The active layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The intrinsic semiconductor layer has multiple microstructures. The second type semiconductor layer is disposed between the intrinsic semiconductor layer and the active layer. The first electrode and the second electrode are respectively disposed on opposite sides of the active layer. The second electrode is disposed in a through hole of the intrinsic semiconductor layer and a recess of the second type semiconductor layer.