Vertical LED Substrate Removal via Breakable Metal Nitride Layer
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Solution Overview
Problem
Conventional manufacturing processes for vertical type solid state light emitting devices face challenges in precisely controlling substrate removal, are time-consuming, and require expensive laser lift-off technology, which is complex and unreliable.
Innovation Solution
A manufacturing process involving the formation of a breakable structure with low melting point metal droplet structures on a substrate, allowing for easy separation of the substrate from the light emitting stacking structure without damaging it, using ordinary heating equipment instead of costly grinding or laser lift-off equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mechanical grinding process is used to remove sapphire substrate, then substrate removal is achieved, but manufacturing precision and time efficiency deteriorate due to difficulty in controlling grinding thickness and time-consuming process
Solution Approach 1:
A breakable structure is formed on the substrate before epitaxial growth, consisting of a first metal nitride layer with metal droplet structures. This preliminary structure is designed to be easily breakable, enabling subsequent simple separation of the substrate from the light emitting stacking structure without requiring time-consuming mechanical grinding processes.
Solution Approach 2:
The patent replaces the mechanical grinding system with a chemical/structural approach. The breakable structure uses metal nitride layers and metal droplet structures that can be easily separated through chemical etching or thermal processes, substituting the mechanical grinding system that causes precision and time issues.
2Productivity
If laser lift-off technology is used to remove sapphire substrate, then substrate removal speed is improved, but device complexity and cost increase due to expensive equipment and complicated laser power adjustment
Solution Approach 1:
The patent introduces a disposable breakable structure (metal nitride layer with metal droplet structures) that is designed to be easily removed. This inexpensive, temporary structure enables fast substrate separation without requiring expensive laser lift-off equipment or complex power adjustment systems, achieving high productivity through a simple, low-cost mechanism.
Solution Approach 2:
The patent changes the physical and chemical parameters of the substrate interface by forming a breakable structure with specific metal nitride compositions and metal droplet structures. These parameter changes (chemical composition, structural properties) enable easy separation through chemical etching or thermal processes, replacing the need for complex laser parameter adjustments.
3Productivity
If laser power is increased to quickly remove sapphire substrate, then substrate removal speed is improved, but manufacturing precision deteriorates due to damage to epitaxy growth layer
Solution Approach 1:
A breakable structure is formed on the substrate before epitaxial growth, consisting of a first metal nitride layer with metal droplet structures. This preliminary structure is designed to be easily breakable, enabling subsequent simple separation of the substrate from the light emitting stacking structure without requiring time-consuming mechanical grinding processes.
Solution Approach 2:
The breakable structure acts as an intermediary layer between the substrate and the light emitting stacking structure. This intermediary structure enables easy separation while protecting the epitaxial layer from damage, as it can be removed through gentle chemical etching or thermal processes rather than high-power laser or mechanical grinding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process increases the yield and timeliness of the manufacturing process by ensuring the light emitting stacking structure remains intact and reduces equipment costs, enhancing the reliability and efficiency of the vertical type solid state light emitting device production.
Implementation Method 1
the breakable structure contains a plurality of M metal droplet structures
Data Source
AI summary
A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.