Vertical Light-Emitting Structure for Perpendicular Light Extraction
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Solution Overview
Problem
Existing light-emitting devices face challenges in improving light extraction efficiency, particularly in directing light emitted from active layers in a perpendicular direction to enhance display pixel performance.
Innovation Solution
A light-emitting device configuration featuring a columnar structure with an active layer and a p-type semiconductor layer stacked on its side surface, along with a light-shielding layer and a light-reflecting layer, allows for selective light extraction perpendicular to the base, utilizing a continuous light control layer on shared end surfaces for improved light directionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If light is emitted from the active layer in all directions, then light emission is achieved, but light extraction efficiency in the perpendicular direction is insufficient
Solution Approach 1:
The light-emitting device is divided into multiple functional layers (active layer, first semiconductor layer, second semiconductor layer, light-shielding layer, light-reflecting layer) with distinct roles. This segmentation allows each layer to be optimized for its specific function, particularly for directing light in the perpendicular direction while maintaining manufacturing feasibility through standardized layering processes.
Solution Approach 2:
The patent transitions from conventional planar light emission to a vertically stacked three-dimensional structure. By arranging the active layer and semiconductor layers in a vertical configuration with light extraction optimized in the perpendicular direction, the invention utilizes the vertical dimension to improve light extraction efficiency without significantly increasing lateral structural complexity.
2Productivity
If a conventional planar structure is used, then manufacturing is simple, but light extraction efficiency and integration density are limited
Solution Approach 1:
The invention adopts a vertical stacked structure where the active layer and semiconductor layers are arranged perpendicular to the substrate plane. This vertical arrangement increases integration density by utilizing the vertical dimension rather than expanding laterally, allowing more functional layers to be packed into a smaller footprint area while maintaining manufacturability through sequential deposition processes.
Solution Approach 2:
The stacked layer structure serves multiple functions simultaneously: the active layer generates light, the semiconductor layers provide electrical conduction and additional light extraction paths, the light-shielding layer directs light directionality, and the light-reflecting layer enhances light output. This multi-functionality within a compact vertical structure increases integration density without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency and integration density, facilitating higher definition displays by directing light emitted from the active layer upwards, thereby improving the overall performance of light-emitting devices in display applications.
Implementation Method 1
an active layer provided between the structure and the semiconductor layer
Data Source
AI summary
A light-emitting device according to one embodiment of the present disclosure includes: a base having a first surface and a second surface that face each other; a structure having a first conductivity type and erected in a direction perpendicular to the first surface of the base; a semiconductor layer having a second conductivity type different from the first conductivity type, and provided on a side surface of the structure; and an active layer provided between the structure and the semiconductor layer, and having substantially same end surface as the structure and the semiconductor layer above the first surface of the base.