Vertical Magnetic Recording Layer for High-Density Memory
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Solution Overview
Problem
Current magnetic memory devices, such as spin-transfer torque MRAM, face challenges in achieving sufficient read margin and long write tolerance when highly integrated, and there is a need for devices that can process high-capacity data quickly and efficiently with low power consumption.
Innovation Solution
A magnetic memory device with a vertical magnetic recording layer, a non-magnetic metal layer, and a fixed layer, utilizing a spin orbit torque generator to generate spin orbit torque for writing and reading information, allowing for a three-terminal structure that separates write and read operations and enables multi-value storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If magnetic memory devices are highly integrated with smaller patterns, then storage density and capacity increase, but read margin becomes insufficient and write tolerance decreases
Solution Approach 1:
The patent transitions from planar magnetic recording layers to vertically standing magnetic recording layers. This dimensional change from 2D to 3D structure increases storage density while maintaining sufficient read margin by creating a taller magnetic moment that provides better signal detection capability despite pattern miniaturization.
Solution Approach 2:
The patent changes the geometric parameters of the magnetic recording layer by making its length in the extension direction at least twice its cross-sectional length. This parameter change creates an anisotropic magnetic structure that enhances both storage density and read margin simultaneously.
2Quantity of substance
If magnetic memory devices are highly integrated with smaller patterns, then storage density increases, but write tolerance becomes insufficient
Solution Approach 1:
By standing the magnetic recording layer vertically rather than keeping it planar, the patent extends the magnetic moment in the vertical direction. This provides longer write tolerance as the extended magnetic structure maintains stability during write operations even as pattern sizes are reduced for higher density.
Solution Approach 2:
The patent employs a composite structure with the vertical magnetic recording layer, non-magnetic metal layer, and fixed layer. This composite design optimizes both storage density and write tolerance by combining materials with different magnetic and electrical properties in a vertically stacked configuration.
3Speed
If spin transfer torque MRAM is used for high speed operation, then operating speed increases, but power consumption increases
Solution Approach 1:
The patent separates the write and read functions into distinct terminal structures. The write operation uses the SOT generator with first and second electrodes, while the read operation uses the third electrode connected to the fixed layer. This segmentation allows optimized power delivery for high-speed operation while maintaining low power consumption through separate current paths.
Solution Approach 2:
The non-magnetic metal layer acts as an intermediary between the SOT generator and the vertical magnetic recording layer. It receives spin-orbit torque from the current flowing through the SOT generator and efficiently transfers it to the magnetic recording layer, enabling high-speed writing with reduced power consumption compared to direct spin transfer torque methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enables high-density, large-capacity, and reliable magnetic memory devices capable of writing and reading multiple bits of information efficiently, overcoming the limitations of existing technologies by using a three-terminal structure and spin orbit torque technology.
Implementation Method 1
a spin orbit torque (SOT) generator connected to a lower surface of the vertical magnetic recording layer and configured to generate a SOT
Implementation Method 2
a vertical magnetic recording layer in which a length of an extension direction thereof is two times or more a cross-sectional length of the vertical magnetic recording layer
Implementation Method 3
a fixed layer on the insulating layer in the extension direction
Data Source
AI summary
A magnetic memory device includes a spin orbit torque (SOT) generator configured to generate a SOT, and a vertical magnetic recording layer connected to a main surface of the SOT generator at one end thereof, and is configured to record information using a SOT generated by the SOT generator and a current flowing in the vertical magnetic recording layer in combination. The magnetic memory device includes an insulating layer on one end of the vertical magnetic recording layer in an extension direction of the vertical magnetic recording layer, and a fixed layer on the insulating layer in the extension direction of the vertical magnetic recording layer.