Vertical Memory Gate Contact Structure for Reliable 3D Connections
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Solution Overview
Problem
Vertical non-volatile memory devices face challenges with low connection reliability of gate contact plugs connected to gate electrodes in three-dimensionally arranged memory cells.
Innovation Solution
The device incorporates a gate stack structure with alternating layers of gate electrodes and interlayer insulating layers, featuring gate spacers and gate contact plugs with vertical and horizontal protrusion portions, which are insulated from some gate electrodes by spacers, enhancing connection reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If gate contact plugs are connected to gate electrodes in three-dimensionally arranged memory cells, then data storage capacity is improved, but connection reliability deteriorates
Solution Approach 1:
The patent transitions from two-dimensional planar contact plugs to three-dimensional contact plugs with vertical portions extending through multiple interlayer insulating layers and horizontal protrusion portions contacting gate electrodes at different heights. This dimensional change enables reliable electrical connection between contact plugs and gate electrodes in vertically stacked memory cells, resolving the connection reliability issue while maintaining high storage capacity.
Solution Approach 2:
The patent introduces gate spacers as intermediary insulating structures positioned between the horizontal protrusion portions of contact plugs and certain gate electrodes. These gate spacers prevent unwanted electrical contact and ensure proper electrical isolation, thereby improving connection reliability by mediating the electrical interaction between conductive elements in the three-dimensional structure.
2Adaptability or versatility
If gate contact plugs are made to contact multiple gate electrodes, then connectivity is improved, but insulation control becomes difficult
Solution Approach 1:
The patent segments the gate electrodes into different height levels within the vertical stack, with each gate electrode positioned at a specific height. The contact plugs are correspondingly segmented with horizontal protrusion portions at different heights to contact specific gate electrodes. This segmentation enables selective connectivity while simplifying insulation control, as gate spacers only need to isolate contact plugs from gate electrodes at non-target heights rather than managing complex multi-directional isolation.
Data Source
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AI summary
A vertical non-volatile memory device may include a gate stack including gate electrodes and interlayer insulating layers alternately stacked, gate spacers, and gate contact plugs spaced apart from each other in the gate stack. The gate contact plugs may include a first gate contact plug vertically contacting a first gate electrode among the gate electrodes and a second gate contact plug vertically contacting a second gate electrode among the gate electrodes. The gate contact plugs may include vertical plug portions extending in a vertical direction and protrusion plug portions that horizontally protrude from both sides of the vertical plug portions. The gate spacers that may be between the protrusion plug portions and the gate electrodes. The gate spacers may insulate the gate contact plugs from some of the gate electrodes.