Vertical Memory Stack Contacts Using Insulating Breakdown
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing NAND flash memory technologies face challenges in efficiently connecting conductive layers and memory pillars, leading to inefficiencies in data storage and retrieval processes.
Innovation Solution
A memory device configuration with conductive layers and memory pillars interconnected through a conductive member and insulating film, allowing for electrical connection via an insulating breakdown process to form a conductive path between the layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional connection methods between conductive layers and memory pillars are used, then manufacturing processes become complex, but electrical connectivity and data access efficiency are compromised
Solution Approach 1:
The patent applies parameter changes by utilizing insulating breakdown as a controlled physical transition to transform the insulating film from a non-conductive state to a conductive state. This allows the connection between conductive layers and memory pillars to be established through a phase transition of the insulating material itself, simplifying the manufacturing process while ensuring reliable electrical connectivity. The breakdown voltage and other parameters of the insulating film are precisely controlled to achieve this transformation.
2Productivity
If conventional connection methods are used, then manufacturing processes become simpler, but data access efficiency and electrical connectivity are reduced
Solution Approach 1:
The insulating film performs a dual function: it serves as an insulator during manufacturing and storage, then automatically transforms into a conductor to establish the electrical connection between conductive layers and memory pillars. This self-service mechanism eliminates the need for separate connection structures or additional manufacturing steps, thereby improving data access efficiency while avoiding the complexity of conventional multi-component connection systems.
3Reliability
If insulating breakdown is used to form conductive paths, then electrical connectivity is improved, but control over connection timing and location becomes more difficult
Solution Approach 1:
The patent applies preliminary action by pre-forming the insulating film with specific physical and chemical properties (such as controlled thickness, composition, and distribution of defect sites) before the connection process. These pre-established conditions ensure that when insulating breakdown occurs, the conductive paths form at precise, predetermined locations between conductive layers and memory pillars. The breakdown is triggered by controlled electrical stress applied only after the structure is in place, maintaining manufacturing precision while achieving reliable connectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances data storage efficiency by improving electrical connectivity and reducing manufacturing complexity, thereby optimizing data access and storage operations.
Implementation Method 1
a first connection portion in contact with a side surface of the first conductive member and the corresponding conductive layer to electrically connect the first conductive member to the corresponding conductive layer
Data Source
AI summary
A memory device includes a substrate, a plurality of conductive layers arranged in a first direction above the substrate, a plurality of pillars, each of which extends along the first direction and intersects with the conductive layers, a memory cell being formed at an intersection of one of the pillars and one of the conductive layers, and a plurality of first contacts each extending along the first direction and electrically connected to a corresponding one of the conductive layers. Each of the first contacts includes a first conductive member extending along the first direction, a first connection portion in contact with a side surface of the first conductive member and the corresponding conductive layer to electrically connect the first conductive member to the corresponding conductive layer, and a first insulating film surrounding the side surface of the first conductive member except at a location of the first connection portion.