Vertical Memory Support Pattern Layout for Low-Resistance Word Lines
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Solution Overview
Problem
In vertical memory devices, the increase in the number of three-dimensionally stacked memory cells can lead to mold bending or tilting, resulting in disconnection defects due to insufficient gaps between support patterns, which hinders smooth electricity flow and increases resistance in word lines.
Innovation Solution
A semiconductor device with a gate electrode structure and a support pattern array where the support patterns are designed to maintain sufficient distance, featuring a triangular shape with convex sides and alternating arrangements to prevent concentration and ensure adequate spacing, thereby facilitating smooth current flow and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of memory cells is increased by three-dimensional stacking, then data storage capacity is improved, but mold bending or tilting occurs and support patterns may cause disconnection defects
Solution Approach 1:
The support pattern employs an asymmetric triangular shape with one convex side instead of symmetric geometric shapes. This asymmetric design creates non-uniform spacing that prevents support patterns from aligning in straight lines, thereby avoiding concentration effects and reducing mold bending while maintaining reliable electrical connections
Solution Approach 2:
The support pattern uses a triangular geometry with vertices positioned at different coordinates in the planar dimension, creating a two-dimensional distribution pattern rather than linear alignment. This dimensional approach ensures sufficient gap maintenance in multiple directions simultaneously, preventing disconnection defects while supporting high-density stacking
2Device complexity
If support patterns are placed closer together to increase density, then device complexity is reduced, but electricity flow becomes hindered and resistance increases
Solution Approach 1:
The triangular support pattern with one convex side creates asymmetric spacing that prevents linear alignment of vertices. This asymmetric arrangement maintains sufficient electrical gaps between adjacent support patterns even when densely packed, ensuring smooth current flow through gate electrodes without excessive resistance
Solution Approach 2:
The convex side of the triangular support pattern introduces curved geometry instead of straight edges. This curvature helps distribute electrical field lines more evenly and prevents sharp corners that could concentrate stress or hinder current flow, maintaining electrical conductivity in high-density configurations
Data Source
AI summary
A semiconductor device includes a gate electrode structure including gate electrodes spaced apart in a first direction perpendicular to an upper surface of a substrate, each gate electrode extending in a second direction parallel to the upper surface of the substrate, a memory channel structure, and a support pattern array including support patterns spaced apart in the second direction and a third direction crossing the second direction, wherein each support pattern has a shape including three vertices and three sides, and wherein a first vertex of a first support pattern closest to a second support pattern and a first vertex of the second support pattern closest to the first support pattern are not aligned in the third direction but have different positions in the second direction.