Vertical Micro-LED Assembly With Magnetic Electrodes for Precise Transfer
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Solution Overview
Problem
The challenge of transferring millions of semiconductor light emitting diodes (LEDs) with a size of 100 μm or less for large-area displays is difficult due to the lack of efficient transfer methods, particularly for self-assembly processes, which are crucial for high-efficiency displays.
Innovation Solution
A method for manufacturing a display device using vertical semiconductor LEDs with inclined side surfaces and magnetic electrodes, allowing for self-assembly on a transfer substrate, and a novel manufacturing process involving etching and electrode formation to control current and light efficiency, utilizing a self-assembly apparatus with magnetic and electric fields for precise placement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If semiconductor LEDs with size of 100 μm or less are used for large-area displays, then light efficiency is improved by avoiding polarizing plate absorption, but transfer difficulty increases due to the large number of elements required
Solution Approach 1:
The invention segments the manufacturing process into two main stages: first, fabricating semiconductor LEDs on a separate wafer substrate where they can be efficiently produced; second, transferring the completed LEDs to the final display substrate. This segmentation allows optimization of each stage independently, solving the transfer difficulty while maintaining the light efficiency benefits of small-sized LEDs.
Solution Approach 2:
The invention introduces an intermediary transfer substrate that temporarily holds the semiconductor LEDs during the manufacturing process. This intermediary substrate facilitates the transfer of millions of tiny LEDs to the final display substrate, making the manufacturing process feasible while preserving the high light efficiency characteristics of the small-sized LEDs.
2Productivity
If self-assembly method is used for transferring semiconductor LEDs, then productivity is improved for large-screen display, but manufacturing precision requirements increase for achieving proper element positioning
Solution Approach 1:
The invention performs preliminary actions by pre-fabricating the semiconductor LEDs on a wafer substrate with predetermined patterns and structures before transfer. The self-assembly features are pre-configured on both the LEDs and the target substrate, enabling automatic positioning during transfer. This preliminary preparation maintains high positioning accuracy while achieving high productivity through automated self-assembly processes.
3Ease of operation
If vertical semiconductor LED structure with inclined side surfaces is used, then self-assembly capability is improved, but device complexity increases due to additional etching and electrode formation steps
Solution Approach 1:
The invention applies local quality by creating inclined side surfaces only on specific regions of the semiconductor LED structure that require self-assembly, rather than modifying the entire device. The etching process is selectively applied to generate inclinations on contact surfaces, while other structural elements remain unchanged. This localized modification enables self-assembly capability without unnecessarily increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-yield transfer and assembly of semiconductor LEDs onto a substrate, facilitating the production of large-area displays with improved current and light efficiency, reducing production time and costs.
Implementation Method 1
at least one of the first conductivity type electrode and the second conductivity type electrode includes a magnetic layer
Data Source
AI summary
A display device, according to an embodiment of the present invention, comprises a semiconductor light-emitting element, the semiconductor light-emitting element comprising: a first conductive electrode; an undoped semiconductor layer formed on the first conductive electrode; a first conductive semiconductor layer formed on the undoped semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a second conductive electrode formed on the second conductive semiconductor layer; wherein the first conductive electrode is formed to cover a part of a side surface of the first conductive semiconductor layer.