Vertically Bonded MMIC Layout for Active-Passive Integration

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Solution Overview

Problem

Monolithic microwave integrated circuits (MMICs) face challenges in integrating active and passive devices due to layout inefficiencies and material limitations, leading to increased size and cost, as well as performance constraints.

Innovation Solution

The active and passive devices are fabricated separately on different wafers and then integrated vertically, allowing for optimized processing conditions and materials selection for each, resulting in a smaller footprint and improved performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If active and passive devices are integrated monolithically on a common semiconductor substrate, then device integration is achieved, but layout efficiency deteriorates and device size increases

Engineering Contradiction:
Improvedevice integrationVSAvoiddevice size
Core Design Contradiction:
Device complexityVSArea of stationary object

Solution Approach 1:

The patent divides the integrated circuit into two separate portions: a first portion containing active devices formed from semiconductor epitaxial layers, and a second portion containing passive devices formed on a separate substrate. This segmentation allows each portion to be optimized independently, improving layout efficiency while maintaining device integration through subsequent bonding of the two portions together.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If discrete lumped components are used in microwave integrated circuits, then circuit functionality is achieved, but manufacturing complexity increases and handling difficulty arises at higher frequencies

Engineering Contradiction:
Improvecircuit functionalityVSAvoidmanufacturing complexity
Core Design Contradiction:
Ease of operationVSEase of manufacture

Solution Approach 1:

The patent merges active and passive devices into a single integrated circuit package, with both device types formed using epitaxial growth techniques on their respective substrates. This combination eliminates the need for separate discrete components and their associated wire bonding or surface mounting processes, thereby reducing manufacturing complexity while maintaining full circuit functionality.

Inventive Principle:
Principle #5Merging (Combining)

3Ease of operation

If active devices occupy only a small portion of the semiconductor epitaxial layers, then active device functionality is achieved, but material utilization deteriorates and production cost increases

Engineering Contradiction:
Improveactive device functionalityVSAvoidmaterial utilization
Core Design Contradiction:
Ease of operationVSLoss of substance

Solution Approach 1:

The patent segments the circuit into active and passive device portions, allowing the passive devices to be formed on a separate substrate that can be fully utilized. This eliminates the waste of semiconductor epitaxial layers that occurs when passive devices are later formed in the remaining areas after active device fabrication, thereby improving material utilization and reducing production costs.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables flexible design choices, reduces die size, enhances device performance, and lowers production costs by allowing independent optimization of active and passive devices, improving overall reliability and efficiency.

Implementation Method 1

active devices formed by an epitaxial structure grown on the first substrate

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS20250336862A1Electronic device and manufacturing method of electronic device
Publication Date: 2025.10.30 3DMMIC LLC
  • US20250336862A1 patent drawing
  • US20250336862A1 patent drawing
  • US20250336862A1 patent drawing

AI summary

An electronic device and a manufacturing method thereof are provided. The manufacturing method includes: providing a first portion, where the first portion includes a first substrate, active devices formed by a semiconductor epitaxial structure grown on the first substrate, and a first bonding structure formed over the first substrate and electrically coupled to the active devices; providing a second portion, where the second portion is free of active devices and the second portion includes a second substrate, passive devices formed over the second substrate, and a second bonding structure electrically coupled to the passive devices; and forming a signal processing circuit by bonding the first portion to the second portion, where the active devices are electrically coupled to the passive devices by bonding the first bonding structure to the second bonding structure to form the signal processing circuit.