Vertical Nanosheet Channel Structure for Compact MBCFET Performance
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Solution Overview
Problem
Existing semiconductor devices face challenges in further miniaturization and performance enhancement, particularly in FinFETs and MBCFETs, with MBCFETs needing improved integration and performance optimization.
Innovation Solution
A semiconductor device with a vertical structure and nanosheets extending from the substrate in non-parallel orientations is developed, allowing for optimized carrier mobility and mechanical stability through a comb-like structure, which can be used in Multi-Bridge Channel Field Effect Transistors (MBCFETs) or Multi-Wave Bridge Channel Field Effect Transistors (MWCFETs).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional FinFET or MBCFET structures are used, then device miniaturization is achieved, but further miniaturization is limited and performance enhancement is insufficient
Solution Approach 1:
The patent transitions from conventional planar or simple vertical structures to a three-dimensional comb-like architecture where nanosheets extend laterally from vertical structures at non-parallel orientations. This dimensional evolution increases the effective channel area and surface area without proportionally increasing the footprint, enabling continued miniaturization while maintaining or enhancing performance through increased surface area for carrier transport
Solution Approach 2:
The channel region is segmented into multiple nanosheets extending at different orientations (first orientation and second orientation) from vertical structures. This segmentation creates multiple independent conduction paths, increasing the total effective channel area and allowing parallel carrier transport, which enhances device performance while maintaining compact dimensions
2Ease of manufacture
If nanosheets are oriented parallel to the substrate, then manufacturing is simplified, but carrier mobility and device performance are suboptimal
Solution Approach 1:
Different portions of the nanosheet structure are assigned different orientations: nanosheets extend in a first orientation in one region and in a second orientation (different from the first) in another region. This local variation in orientation allows optimization of carrier mobility in different areas while maintaining manufacturability through controlled growth processes
Solution Approach 2:
The patent changes the orientation parameter of nanosheets from uniform (parallel to substrate) to varied (non-parallel at different orientations). By controlling the growth orientation and angle of nanosheets during fabrication, the device achieves optimized carrier mobility and performance characteristics that cannot be obtained with uniform parallel orientation
3Reliability
If the nanosheet surface is parallel to the substrate, then mechanical stability is reduced, but non-parallel orientations increase surface area and current drive capability
Solution Approach 1:
The nanosheet structure employs asymmetric orientations relative to the substrate, with nanosheets extending at non-parallel angles. This asymmetry increases the projected surface area and current drive capability while the anchoring to vertical structures provides mechanical stability, creating an optimized balance between electrical performance and structural integrity
Data Source
AI summary
Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device. According to the embodiments, the semiconductor device may include: a vertical structure extending in a vertical direction relative to a substrate; and a nanosheet extending from the vertical structure and spaced apart from the substrate in the vertical direction, wherein the nanosheet includes a first portion in a first orientation, and at least one of an upper surface and a lower surface of the first portion is not parallel to a horizontal surface of the substrate.