Vertical Organic Transistor Grid Channel Fabrication
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Solution Overview
Problem
Existing organic field effect transistors face challenges in reducing the distance between the source and drain, requiring complex fabrication methods and high operating voltages, which hinders their integration into soft electronics and display technology.
Innovation Solution
A vertical organic transistor structure with a metal grid having openings, where the channel length is determined by the organic semiconductor layer thickness, allowing for simple vapor deposition or solution processing without photolithography, and enabling low operating voltages by modulating carrier flow through the grid openings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If photolithographic technology is used to reduce the distance between source and drain, then the channel length can be reduced to sub-micron dimension, but the process deteriorates organic semiconductors
Solution Approach 1:
The patent transitions from planar horizontal channel configuration to vertical channel configuration. The source and drain electrodes are positioned at different vertical levels separated by an insulating layer, with the organic semiconductor filling the vertical space. This dimensional change allows short channel length without requiring photolithographic processing that damages organic materials.
Solution Approach 2:
The channel region is segmented into distinct vertical layers: source electrode, first insulating layer, organic semiconductor layer, second insulating layer, and drain electrode. This segmentation allows each layer to be processed independently using gentle deposition and lamination techniques suitable for organic semiconductors, avoiding photolithographic damage.
2Shape
If complex chemical or mechanical methods are used to fabricate trenches for containing organic semiconductor layer, then vertical channel structure can be achieved, but the fabrication process becomes complex
Solution Approach 1:
The patent merges multiple functions into the vertical stacked structure: the insulating layers serve as both structural support and channel definition, the organic semiconductor is deposited conformally to fill the vertical space, and the source/drain electrodes are formed by sequential deposition. This integration eliminates the need for separate trench fabrication steps.
Solution Approach 2:
The organic semiconductor layer self-organizes into the vertical channel structure through conformal deposition onto the insulating layers. The material automatically fills the vertical space between source and drain electrodes, creating the channel structure without requiring complex mechanical or chemical trench formation processes.
3Ease of operation
If higher operating voltages are used to achieve sufficient current modulation, then current can be modulated effectively, but the device cannot be integrated into soft electronics and display technology
Solution Approach 1:
The patent changes the geometric parameters of the vertical channel structure, particularly the thickness of the insulating layers and the vertical distance between source and drain. By optimizing these dimensions, the electric field distribution is improved, enabling effective current modulation at low operating voltages suitable for soft electronics and display applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves effective current modulation with low operating voltages, simple fabrication, and integration with flexible substrates, enhancing the potential for next-generation soft electronics and display technology.
Implementation Method 1
a first organic semiconductor layer separates the emitter and the grid, and a second organic semiconductor layer separates the grid and the collector; carriers are injected by the emitter and pass the grid openings and then reach the collector
Implementation Method 2
the electric potential distribution between the emitter and the collector can be modulated by the voltages of the grid and the collector
Data Source
AI summary
A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.