Vertical Oxide-Semiconductor Transistors for Higher MRAM Drive Current
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The drive current of transistors in magnetoresistive random access memory (MRAM) is insufficient to effectively drive a memory array, making it difficult to increase the capacity beyond the MB level.
Innovation Solution
A semiconductor structure is designed with vertical transistors having an oxide semiconductor channel material, staggered contact pads connected to even numbers of transistors, and magnetic tunnel junctions formed on these pads, allowing multiple transistors to drive a single junction, thereby increasing the drive current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a single transistor is used to drive a magnetic tunnel junction, then the device structure is simple, but the drive current is insufficient to effectively drive the memory array
Solution Approach 1:
Multiple vertical transistors are merged and connected to share a common contact pad, which then drives a single magnetic tunnel junction. This combining of transistor functions increases the total drive current available to the MTJ while maintaining a relatively simple overall structure.
Solution Approach 2:
The patent transitions from a planar transistor arrangement to a vertical transistor configuration where multiple transistors are stacked vertically and share common contact pads. This dimensional change allows multiple transistors to contribute to driving the same MTJ, effectively increasing drive current capability.
2Power
If multiple transistors share a common contact pad to increase drive current, then the drive current increases, but the contact pad design becomes more complex
Solution Approach 1:
The contact pad is designed with multi-functionality, serving as a common connection point for multiple vertical transistors while maintaining a simple single-point interface to the magnetic tunnel junction. This universal design allows the contact pad to handle multiple transistor outputs without requiring complex individual connections for each transistor.
3Power
If vertical transistors with oxide semiconductor channel material are used, then the drive current capability improves, but the manufacturing process becomes more complex
Solution Approach 1:
The patent changes the channel material parameter from conventional materials to oxide semiconductor materials in the vertical transistors. This material parameter change enables improved drive current capability while the vertical architecture and shared contact pad design help mitigate the manufacturing complexity by reducing the overall number of discrete components.
Data Source
AI summary
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate. A plurality of vertical transistors arranged in an aligned manner are formed on the substrate, wherein a channel material of the vertical transistor includes an oxide semiconductor. A plurality of staggered contact pads connected to upper ends of the vertical transistors are formed on the vertical transistors, wherein a single contact pad is connected to the upper ends of an even number of vertical transistors. A magnetic tunnel junction is formed on the contact pad.