Vertical Photonic Waveguide Stack for Linear and Nonlinear Optics

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Solution Overview

Problem

Integrated photonics face challenges in space constraints and material damage due to high temperature deposition processes, limiting the number and type of components that can be integrated on a single layer of a photonic integrated circuit (PIC), affecting optical performance.

Innovation Solution

A photonic waveguide structure is developed with vertically integrated photonic waveguide layers, allowing for both linear and nonlinear optical operations, using low-temperature sputtering processes to form multiple layers without damaging sensitive materials, enabling integration of diverse materials in any order across multiple layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If high-temperature deposition processes are used to fabricate photonic waveguide layers, then material integration is achieved, but sensitive components are damaged and material combinations are restricted

Engineering Contradiction:
Improvematerial integrationVSAvoidcomponent integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the temperature parameter from high-temperature deposition to low-temperature deposition processes. This allows sensitive photonic components to be fabricated without thermal damage while still achieving proper material deposition and integration of multiple layers with different material combinations.

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If single-layer photonic integrated circuits are used, then fabrication is simplified, but integration of both linear and nonlinear optical operations is limited

Engineering Contradiction:
Improvefabrication simplicityVSAvoidoptical operation integration
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent transitions from a single-layer planar structure to a multi-layer vertical stack configuration. This dimensional change from 2D to 3D architecture enables the integration of both linear and nonlinear optical operations in separate layers, with optical coupling between layers, thereby increasing functional versatility without proportionally increasing fabrication complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If multiple materials are integrated in a single layer, then functional complexity increases, but space constraints and material compatibility issues arise

Engineering Contradiction:
Improvefunctional complexityVSAvoidchip area
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent distributes multiple materials with different optical properties across multiple vertical layers instead of congesting them in a single planar layer. This vertical stacking approach enables integration of diverse materials (e.g., silicon nitride, silicon oxide, chalcogenide glasses) while maintaining adequate spacing and reducing material compatibility issues, effectively utilizing the third dimension to overcome chip area constraints.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentEP4177649B1Photonic waveguide structure
Publication Date: 2026.05.13 VIAVI SOLUTIONS INC(US)
  • EP4177649B1 patent drawingFigure 1
  • EP4177649B1 patent drawingFigure 2
  • EP4177649B1 patent drawing

AI summary

A photonic waveguide structure includes at least four photonic waveguide layers disposed in a stack configuration. A first photonic waveguide layer, of the at least four photonic waveguide layers, includes a first active structure associated with one or more particular nonlinear optical characteristics, which include a Kerr coefficient that is greater than or equal to 1 × 10-18 meters squared per Watt. A second photonic waveguide layer, of the at least four photonic waveguide layers, includes a second active structure associated with one or more particular linear optical characteristics, which include a propagation loss parameter that is less than or equal to 0.5 decibels per centimeter. The first active structure and the second active structure are formed using one or more sputtering processes, and the first active structure and the second active structure are each configured to transmit light with wavelengths from 350 nanometers (nm) to 5000 nm.